Oral presentation

[12p-N303-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Sun. Sep 12, 2021 1:30 PM - 4:30 PM N303 (Oral)

Toshihiro Nakaoka(Sophia Univ.), Ryuichi Ohta(NTT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[12p-N303-1] [Highlight]Compact spin qubits using the common gate structure of fin field-effect transistors

〇Tetsufumi Tanamoto¹, Keiji Ono² (1.Teikyo Univ, 2.Riken)

1:45 PM - 2:00 PM

△ [12p-N303-2] Gate tuning of the fractional quantum Hall states in InAs two-dimensional electron gas

〇(B)Soh Komatsu¹, Hiroshi Irie², Takafumi Akiho², Koji Muraki², Tsutomu Nojima³, Tatsushi Akazaki¹ (1.NIT, Kochi College, 2.NTT BRL, 3.IMR, Tohoku Univ.)

2:00 PM - 2:15 PM

▲ [12p-N303-3] Observation of four regions in the electromigration process of Ni nanojunctions

〇(D)Tian Yue¹, Shaoqing Du¹, Kazuhiko Hirakawa^1,2 (1.IIS, Univ.of Tokyo, 2.INQIE,Univ.of Tokyo)

2:15 PM - 2:30 PM

[12p-N303-4] Analysis of electric-field domain formations and carrier transport phenomena in GaAs/AlAs asymmetric double-quantum-well superlattices

〇(M1)Seiryu Nishiyama¹, Ryuto Murohara¹, Tomonori Matsui¹, Makoto Hosoda², Kouichi Akahane³, Naoki Ohtani¹ (1.Doshisha Univ., 2.Shizuoka Univ., 3.NICT)

2:30 PM - 2:45 PM

[12p-N303-5] Effect of well thickness of superlattice on electron-spin transport properties

〇Saeko Hatakeyama¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

2:45 PM - 3:00 PM

△ [12p-N303-6] Spin dynamics in tunnel-coupled structure of dilute nitride GaAs and InAs quantum dots

〇Shino Sato¹, Yuto Nakamura¹, Soyoung Park¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

3:15 PM - 3:30 PM

△ [12p-N303-7] Sinter Annealing induced Enhancement of PL Intensity from Si Quantum Dots

〇(M1)Koki Murakawa¹, Takashi Aoki¹, Toshiyuki Samejima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ. Agri. Tech.)

3:30 PM - 3:45 PM

△ [12p-N303-8] Fabrication of 10 THz-band GRIN lens of Si with sub-wavelength structure

〇Chiharu Kashima¹, Taiki Eda¹, Lisa Toyoshima¹, Keito Tsukamoto¹, Kasumi Miyata¹, Yuka Goto¹, Keita Yamamoto^2,3, Yoshinori Shohmitsu², Toshihiro Nakaoka¹, Takehiko Wada² (1.Sophia Univ., 2.ISAS/JAXA, 3.SOKENDAI)

3:45 PM - 4:00 PM

[12p-N303-9] Photo-electrical Characterization of Photoconductive Antenna with Multiple-Stacked InAs/GaAs Quantum Dots Using Photocurrent Mapping Technique

〇Yasuo Minami^1,2, Reo Nakatsuka¹, Takahiro Kitada¹, Yukihiro Harada³, Toshiyuki Kaizu³, Osamu Kojima³, Takashi Kita³, Osamu Wada⁴ (1.Tokushima Univ., 2.pLED, Tokushima Univ., 3.Grad. Sch. of Eng., Kobe Univ., 4.Kobe Univ.)

4:00 PM - 4:15 PM

[12p-N303-10] Generation of terahertz wave due to difference-frequency mixing by excitation of barriers in a GaSb/AlGaSb multiple quantum well

〇Osamu Kojima¹, Takashi Kita¹, Kouichi Akahane² (1.Kobe Univ., 2.NICT)

4:15 PM - 4:30 PM

[12p-N303-11] Effects of electric field screening on terahertz wave emissions in a GaAs multiple film

〇Takayuki Hasegawa¹, Osamu kojima², DaeGwi Kim³ (1.Osaka Inst. Technol., 2.Kobe Univ., 3.Osaka City Univ.)

Poster presentation

[23a-P09-1~1] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Thu. Sep 23, 2021 11:00 AM - 12:40 PM P09 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

11:00 AM - 12:40 PM

[23a-P09-1] XRD analysis of GaN/AlN superlattices grown on Si(001) Substrates by MBE.

〇Kosuke Doi¹, Yano Daiki¹, Morimoto Takumi¹, Miyagawa Yuto¹, Akiyama Hidehumi², Tanaka Yasuhiro¹, Koshiba Shyun¹ (1.Kagawa university, 2.The University of Tokyo)

Sessions

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices