Poster presentation

[20p-P03-1~3] 9.3 Nanoelectronics

Tue. Sep 20, 2022 4:00 PM - 6:00 PM P03 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[20p-P03-1] Input/output characteristics of single-electron NAND circuit

〇Koji Minamikawa¹, Sigeru Imai¹ (1.Ritsumei Univ.)

4:00 PM - 6:00 PM

[20p-P03-2] Pump operable gate capacity ratio in common-gate quadruple-dot single-electron devices

〇KOki Tsujimoto¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

4:00 PM - 6:00 PM

[20p-P03-3] Nonlinear Signal Conversion in Carbon-Coated Co-Nanoparticle Random Arrays for Physical Reservoir

〇(M2)Kenta Fujikura¹, Tetsuya Urae¹, Masataka Moriya¹, Hiroshi Shimada¹, Yoshinao Mizugaki¹ (1.The Univ. of Electro-Comm)

Oral presentation

[21a-A102-1~7] 9.3 Nanoelectronics

Wed. Sep 21, 2022 9:30 AM - 11:15 AM A102 (A102)

Takahide Oya(Yokohama Natl. Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

△ [21a-A102-1] Electrical properties of metallic nanodot arrays formed on thermally oxidized and sputter deposited SiO₂ films

〇Takayuki Gyakushi¹, Ikuma Amano¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

9:45 AM - 10:00 AM

△ [21a-A102-2] Stability Improvement of Metallic Single-Electron Transistors by a Cover of Atomic Layer Deposited Insulating Film

〇Yoshiaki Iwata¹, Go Sakamoto², Alka Singh³, Hiroaki Satoh⁴, Hiroshi Inokawa⁴ (1.GSIST, Shizuoka Univ., 2.Eng., Shizuoka Univ., 3.GSST, Shizuoka Univ., 4.RIE, Shizuoka Univ.)

10:00 AM - 10:15 AM

[21a-A102-3] Room Temperature Operation of Si-2x2 Derivative Single Molecule Transistors

〇Fu Ishizuka¹, Ryo Shintani², Yutaka Majima¹ (1.Tokyo Tech., 2.Osaka Univ.)

10:15 AM - 10:30 AM

[21a-A102-4] Rapid Impedance Drop during Dielectrophoretic Assembly of Gold Nanoparticle Arrays

Tetsuya Urae¹, Hiroshi Shimada¹, 〇Yoshinao Mizugaki¹ (1.UEC Tokyo)

10:30 AM - 10:45 AM

△ [21a-A102-5] Investigation of Nanogap Formation by Electromigration Method in Applied Electric Field II

〇Hiroyuki Motoyama^1,2, Hiroshi Suga¹, Hisashi Shima², Hiroyuki Akinaga², Yasuhisa Naitoh² (1.ChibaTech, 2.AIST)

10:45 AM - 11:00 AM

[21a-A102-6] Hydrogen sensor fabricated using a platinum/titanium oxide nanocontact

〇Yasuhisa Naitoh¹, Sumiya Touru¹, Shima Hisashi¹, Akinaga Hiroyuki¹ (1.AIST)

11:00 AM - 11:15 AM

[21a-A102-7] Fabrication of polycrystalline LaF₃ electrodes and comparison with single crystal electrode for high performance fluoride ion sensor

〇(M2)Kaito Kanda¹, Yamada Tetsuya¹, Yanagida Yasuko¹, Mayanagi Gen², Takahashi Masahiro² (1.Tokyo Tec. IIR, 2.Tohoku Univ. Division of Oral Ecology and Biochemistry)

Oral presentation

[21p-A102-1~10] 9.3 Nanoelectronics

Wed. Sep 21, 2022 1:00 PM - 3:45 PM A102 (A102)

Yoshinao Mizugaki(UEC), Takahide Oya(Yokohama Natl. Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[21p-A102-1] Changes in thermal properties of ionic liquids by confinement in metal-organic frameworks

〇Ichiro Ohira¹, Sang-Gyu Koh¹, Taiki Koide¹, Asahi Arai¹, Miho Itoi², Marika Yokota², Hiroyuki Kai¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci., 2.Nihon Univ.)

1:15 PM - 1:30 PM

[21p-A102-2] Noise-energy conversion in an aF DRAM

〇Kensaku Chida¹, Akira Fujiwara¹, Katsuhiko Nishiguchi¹ (1.NTT BRL)

1:30 PM - 1:45 PM

[21p-A102-3] Correlation between Nanostructure and Electrical Characteristics in Nano-convex embedded Si MOSFET

〇Takuma Mitsuya¹, Shintaro Mizuno¹, Seiya Kasai¹ (1.RCIQE,Hokkaido Univ.)

1:45 PM - 2:00 PM

[21p-A102-4] Evaluation for responsiveness of essential circuit to thermal noise in single-electron information-processing circuit mimicking behavior of ants

〇Soichi Okada¹, Takahide Oya¹ (1.Yokohama National Univ.)

2:00 PM - 2:15 PM

[21p-A102-5] Design of single-electron synaptic circuit harnessing thermal noise

〇Takuto Kobayashi¹, Takahide Oya¹ (1.Yokohama National Univ.)

2:30 PM - 2:45 PM

[21p-A102-6] Implementing Learning Function of Online Learning for Single-Electron Reservoir Computing Circuit

〇Shunya Watanabe¹, Takahide Oya¹ (1.Yokohama Natl. Univ.)

2:45 PM - 3:00 PM

[21p-A102-7] Design of new single-electron circuit to determine reacting direction for single-electron information- processing circuit based on principle of molecular computing

〇Kairi Yokoyama¹, Takahide Oya¹ (1.Yokohama National Univ.)

3:00 PM - 3:15 PM

[21p-A102-8] Performance improvement of single-electron reaction-diffusion circuit for generation of plane waves

〇(B)Keiichiro Tamura¹, Yuito Nakamori¹, Takahide Oya¹ (1.Yokohama Univ.)

3:15 PM - 3:30 PM

[21p-A102-9] Improvement of pursuit circuit for single-electron circuit mimicking behavior of herd of wolves

〇Riku Ogawa¹, Takahide Oya¹ (1.YNU)

3:30 PM - 3:45 PM

[21p-A102-10] Design of single-electron circuit to draw unicursal curves for Euler graphs

〇Seiji Tsukada¹, Takahide Oya¹ (1.Yokohama National Univ.)

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[20p-P03-1~3] 9.3 Nanoelectronics

[20p-P03-1] Input/output characteristics of single-electron NAND circuit

[20p-P03-2] Pump operable gate capacity ratio in common-gate quadruple-dot single-electron devices

[20p-P03-3] Nonlinear Signal Conversion in Carbon-Coated Co-Nanoparticle Random Arrays for Physical Reservoir

[21a-A102-1~7] 9.3 Nanoelectronics

△ [21a-A102-1] Electrical properties of metallic nanodot arrays formed on thermally oxidized and sputter deposited SiO₂ films

△ [21a-A102-2] Stability Improvement of Metallic Single-Electron Transistors by a Cover of Atomic Layer Deposited Insulating Film

[21a-A102-3] Room Temperature Operation of Si-2x2 Derivative Single Molecule Transistors

[21a-A102-4] Rapid Impedance Drop during Dielectrophoretic Assembly of Gold Nanoparticle Arrays

△ [21a-A102-5] Investigation of Nanogap Formation by Electromigration Method in Applied Electric Field II

[21a-A102-6] Hydrogen sensor fabricated using a platinum/titanium oxide nanocontact

[21a-A102-7] Fabrication of polycrystalline LaF₃ electrodes and comparison with single crystal electrode for high performance fluoride ion sensor

[21p-A102-1~10] 9.3 Nanoelectronics

[21p-A102-1] Changes in thermal properties of ionic liquids by confinement in metal-organic frameworks

[21p-A102-2] Noise-energy conversion in an aF DRAM

[21p-A102-3] Correlation between Nanostructure and Electrical Characteristics in Nano-convex embedded Si MOSFET

[21p-A102-4] Evaluation for responsiveness of essential circuit to thermal noise in single-electron information-processing circuit mimicking behavior of ants

[21p-A102-5] Design of single-electron synaptic circuit harnessing thermal noise

[21p-A102-6] Implementing Learning Function of Online Learning for Single-Electron Reservoir Computing Circuit

[21p-A102-7] Design of new single-electron circuit to determine reacting direction for single-electron information- processing circuit based on principle of molecular computing

[21p-A102-8] Performance improvement of single-electron reaction-diffusion circuit for generation of plane waves

[21p-A102-9] Improvement of pursuit circuit for single-electron circuit mimicking behavior of herd of wolves

[21p-A102-10] Design of single-electron circuit to draw unicursal curves for Euler graphs

Authenticate

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[20p-P03-1~3] 9.3 Nanoelectronics

[21a-A102-1~7] 9.3 Nanoelectronics

△ [21a-A102-1] Electrical properties of metallic nanodot arrays formed on thermally oxidized and sputter deposited SiO2 films

△ [21a-A102-2] Stability Improvement of Metallic Single-Electron Transistors by a Cover of Atomic Layer Deposited Insulating Film

△ [21a-A102-5] Investigation of Nanogap Formation by Electromigration Method in Applied Electric Field II

[21p-A102-1~10] 9.3 Nanoelectronics

Authenticate

△ [21a-A102-1] Electrical properties of metallic nanodot arrays formed on thermally oxidized and sputter deposited SiO₂ films