[A-5-3] Proximity Effect Correction for 1/4 μm Pattern Formation in Electron Beam Lithography

T. Takigawa, E. Nishimura, S. Tamamushi, Y. Katoh (1.VLSI Research Center, Toshiba R & D Center, Toshiba Corporation)

1985 Conference on Solid State Devices and Materials |PDF Download

[A-5-4] Measurement of Mask Temperature Rise and Distortion in SR Lithography

T. Kaneko, M. Suzuki, A. Ozawa, T. Ohkubo (1.NTT Atsugi Electrical Communication Laboratories)

1985 Conference on Solid State Devices and Materials |PDF Download

[A-5-5] A Discussion on Resist Development Trend and the Ultimate Limitation

Yasuo IIDA (1.Microelectronics Research Laboratories NEC Corporation)

1985 Conference on Solid State Devices and Materials |PDF Download

[A-5-6] Characterization of a Newly Developed Contrast Enhancement Material for G-Line Exposure

H. Niki, M. Nakase, A. Kumagae, T. Satoh, K. Ikari (1.Toshiba Research & Development Center, 2.VLSI Research Center Toshiba Corporation)

1985 Conference on Solid State Devices and Materials |PDF Download

[A-5-7] Photoetching of Organic Resists by Excimer Lasers

Yoshiharu OZAKI, Kazuo HIRATA (1.NTT Atsugi Electrical Communication Laboratories)

1985 Conference on Solid State Devices and Materials |PDF Download

[A-5-8] A High-Contrast Inorganic Ion Resist Using Amorphous WO3 and MoO3

N. Koshida, O. Tomita, Y. Iketsu (1.Faculty of Technology, Tokyo University of Agriculture and Technology)

1985 Conference on Solid State Devices and Materials |PDF Download

[B-4-1] Recent Advances in High Speed Bipolar LSI Technology

Tetsushi Sakai (1.NTT Atsugi Electrical Communication Laboratories)

1985 Conference on Solid State Devices and Materials |PDF Download

[B-4-2] A 165 ps/gate 5000-Gate ECL Gate Array

Masao Suzuki, Michihiro HIRATA, Yoshitaka ITOH (1.NTT, Atsugi Electrical Communication Laboratories)

1985 Conference on Solid State Devices and Materials |PDF Download

[B-4-3] A 2.1-GHz 56-mW Two-Modulus Prescaler IC Using Salicide Base Contact Technology

T. Hirao, T. Ikeda, N. Katoh (1.LSI R&D Laboratory, Kita-Itami Works Mitsubishi Electric Corporatlon)

1985 Conference on Solid State Devices and Materials |PDF Download

[B-4-4] A New Si Bipolar Transistor Using Amorphous SiC:H as a Wide-Gap Emitter

Kimihiro Sasaki, Seijiro Furukawa, Mohammad Mahmudur Rahman (1.Department of Applied Electronics, Graduate School of Sic. & Eng., Tokyo Inst. of Tech.)

1985 Conference on Solid State Devices and Materials |PDF Download