[D-4-4] Scanning AES Studies of Electromigration of Ag, In and Sb Ultrathin Films on Si

Hitoshi Yasunaga, Shigetoshi Sakomura, Shiro Kobayashi, Naoki Okuyama, Akiko Natori (1.The University of Electro-Communications, Department of Electronic Engineering)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-5-1] Surface Atomic Structure Analysis by Impact-Collision Ion Scattering Spectroscopy (ICISS)

Masakazu Aono, Ryutaro Souda (1.RIKEN (The Institute of Physical and Chemical Research) and, 2.National Institute for Research in Inorganic Materials)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-5-2] Investigation on Microarea Stress in Silicon by Microprobe Raman Spectroscopy

S. Kambayashi, T. Hamasaki, T. Nakakubo, M. Watanabe, H. Tango (1.Toshiba Corp. VLSI Research Center, Total Information System Div.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-5-3] The Orientation of Crystal Thin Layer with Diamond Structure Using Raman Scattered Light

Wu Huasheng, Lao Pudong, Wu Jiangen, Qu Fengyuan (1.Physics Department, Fudan University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-6-1] Laser Assisted MOVPE Growth of III-V Compounds

Hiroshi Kukimoto (1.Imaging Science & Engineering Laboratory, Tokyo Institute of Technology)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-6-2] Lateral Growth Mechanisms of GaAs MOCVD Layers

Hiromitsu Asai (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-6-3] Highly Uniform Growth of AlGaAs/GaAs Hetero- Epitaxial Wafer for Solar Cell Application by Large-Capacity MOCVD Reactor

N. Hayafuji, S. Ochi, M. Kato, K. Mizuguchi, K. Mitsui, T. Murotani, Y. Yukimoto (1.LSI R&D Laboratory, Mitsubishi Electric Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-6-4] Vapor Phase Epitaxial Growth of AlAs by Chloride Transport Method

Fumio HASEGAWA, Tadashi YAMAMOTO, Koji KATAYAMA, Yasuo NANNICHI (1.Institute of Materials Science, University of Tsukuba)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-7-1] Monolithic Superconductor-Base Hot-Electron Transistor with High Current Gain

Takeshi KOBAYASHI (1.Faculty of Engineering Science, Osaka University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-7-2] Fabrication Technology for Fully Planarized All Niobium Josephson Integrated Circuits

Kenichi KURODA, Junichi NAKANO, Masahiro YUDA, Mineo UEKI (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download