[D-2-5] Picosecond-Switching Optical Bistability in a TM-Wave Injected BH Laser

Yoshihiro Mori, Jun Shibata, Takao Kajiwara (1.Opto-Electronics Laboratory, Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-7-5] A New Ultrafine Si Trench Etching Technique Using Multi-Step Processing

T. Shibata, M. Oda (1.NTT Electrical Communication Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-7-6] Deposition Mechanisms of SixNyHz Films in Synchrotron Radiation-Excited CVD and Measurements of Hydrogen Content

Hakaru Kyuragi, Tsuneo Urisu (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-5-5] High-Speed Self-Aligned Polysilicon Emitter/Base Bipolar Devices Using Boron and Arsenic Diffusion Through Polysilicon

H. Park, T. Yamaguchi, K. Boyer, G. Eiden, C. Clawson, S. Yu, J. Sachitano (1.Tektronix Laboratories, Tektronix, Inc.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-7-6] Sub-Picosecond Electrical Signals for Probing VLSI Environments

M. B. Ketchen, D. R. Grischkowsky, J. -M. Halbout, C. C. Chi, I. N. Duling III, W. J. Gallagher, G. P. Li, P. G. May, M. Scheuermann (1.IBM Thomas J. Watson Research Center)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-6-5] A 15 GHz Dynamic Binary Frequency Divider Fabricated by GaAs ADVANCED SAINT with Asymmetric N+-Layers

T. Enoki, K. Osafune, N. Kato, K. Ohwada (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-6-6] A GaAs Monolithic Operational Amplifier

Shin'ichi Katsu, Masahiro Nishiuma, Issey Ohta, Masahiro Hagio Masaru Kazumura, Gota Kano, Iwao Teramoto (1.Semiconductor Laboratory, Matsushita Electronics Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-7-5] Stepwise Monolayer Growth of GaAs by Switched Laser Metal Organic Vapor Phase Epitaxy

Atsutoshi Doi, Yoshinobu Aoyagi, Sohachi Iwai, Susumu Namba (1.The Institute of Physical and Chemical Research)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-7-6] Selective Growth of GaAs by Reduced Pressure MOCVD Using TMG and TEG

Takashi Ueda, Sachiko Onozawa, Yoshihiro Kawarada, Masahiro Akiyama, Katsuzo Kaminishi (1.Research Laboratory, OKI Electric Industry Co., Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-7-7] Atomic Layer Epitaxy of Uniform GaAs on 3-inch Substrate in Low Pressure MOCVD System

K. Mori, A. Ogura, M. Yoshida, H. Terao (1.Fundamental Research Laboratories, NEC Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download