[D-7-3] Material Dependence of Initial Failure Rates of Josephson Junctions

H. Hoko, A. Yoshida, H. Tamura, T. Imamura, S. Hasuo (1.Fujitsu Limited)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-7-4] Prototype Josephson Logic LSIs

Yutaka HARADA, Yuji HATANO, Kunio YAMASHITA, Mikio HIRANO, Yoshinobu TARUTANI, Ushio KAWABE (1.Central Research Laboratory, Hitachi Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-7-5] Thin Film de SQUID with Quasiparticle-Injected Superconducting Weak Links

Kazuyoshi KOJIMA, Shigetoshi NARA, Koichi HAMANAKA (1.Central Research Laboratory, Mitsubishi Electric Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-8-1] Ellipsometric Characterization of Very Thin Gate Oxides and Correlation with Electrical Properties

Y. Z. Yu, K. K. Hung, Y. C. Cheng (1.Department of Physics, Zhongshan University, 2.Department of Electrical Engineering, University of Hong Kong)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-8-2] Breakdown Characteristics of Ultra Thin Silicon Oxide

Takahisa Kusaka, Yuzuru Ohji, Kiichiro Mukai (1.Central Research Laboratory, Hitachi Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-8-3] Correlation of Carrier Trapping and Oxide Breakdown with H2O Partial Pressures in Pyrogenic Oxides

A. S. Vengurlekar, V. Lakshmanna, K. V. Ramanathan (1.Tata Institute of Fundamental Research)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-8-4] The Effect of Post-Oxidation Annealing on Hot-Carrier Trapping Characteristics in SiO2

Masakazu Shimaya, Noboru Shiono (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-9-1] Hot Electron Induced Punchthrough in Submicron PMOSFETs

Mitsumasa Koyanagi, Alan G. Lewis, Russel A. Martin, Tiao- Yuan Huang, John Y. Chen (1.Xerox, Palo Alto Research Center, Integrated Circuit Laboratory)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-9-2] Effects of X-Ray Irradiation on the Channel Hot-Carrier Reliability of Thin-Oxide n-Channel MOSFETs

J. Y. #NAME?, J. R. Maldonado, M. D. Rodriguez, J. Laskar, D. S. Zicherman (1.IBM T.J. Watson Research Center)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-9-3] New Degradation Phenomena Induced by Ion-Implantation Channeling in Short Channel Transistors

Akihiro Nitayama, Hiroshi Takato, Riichiro Shirota (1.VLSI Research Center, Toshiba Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download