[A-7-1] Variation of Electrical and Optical Properties of Glow Discharge Si-N-H Films with Their Composition

Nicole PROUST, Francois BOULITROP, Bernard HEPP, Nicolas SZYDLO, Eric CRITON, Jose MAGARINO (1.THOMSON-CSF Central Research Laboratory, BP N°10)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-7-2] Growth and Properties of Dielectric Thin Films by Microwave-Excited Plasma

S. Zaima, Y. Yasuda, S. Takashima, T. Nakamura, A. Yoshida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 2.Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-7-3] High Quality Ta2O5 Films Using Ultra-High Purity Ta Sputtering Target

Chisato Hashimoto, Hideo Oikawa, Nakahachiro Honma (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-7-4] Thermodynamical Approach to a New High Dielectric Capacitor Structure: W/HfO2/W

KEISAKU YAMADA (1.VLSI Research Center Toshiba Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] Renaissance of Bipolar Technology

Armin W. Wieder (1.Siemens AG, Central Research and Development, Microelectronics)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] A 1.0 ns 5-Kbit ECL RAM

C. T. Chuang, D. D. Tang, G. P. Li, E. Hackbarth, R. R. Boedeker (1.IBM T.J. Watson Research Center)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-4-3] A Bipolar Gbit/s 8×8 bit S/P, P/S Converter LSI

Michihiro HIRATA, Masao SUZUKI, Naoaki YAMANAKA, Yousuke YAMAMOTO (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-4-4] A Bipolar 32bit Parallel Multiplier-Accumulator Using a 107K-Component VLSI Macrocell

Masao SUZUKI, Michihiro HIRATA (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Ultra High Speed Bipolar Device-SICOS

Tohru Nakamura, Kazuo Nakazato, Katsuyoshi Washio, Youichi Tamaki, Mitsuo Nanba, Tetsuya Hayashida (1.Central Research Laboratory, Hitachi Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-5-2] Forward-Bias Tunnelling Current Limits in Scaled Bipolar Devices

J. del Alamo, R. M. Swanson (1.NTT Labs., 2.Stanford University)

1986 International Conference on Solid State Devices and Materials |PDF Download

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