[D-11-1] Electronic Structure of Crystalline and Amorphous Semiconductors and Heterojunctions Using Bremsstrohlung Isochromat Spectroscopy

Warren B. Jackson (1.Xerox Palo Alto Research Center)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-11-2] Amorphous Al/n+a-SiC/i a-SiC/p+a-SiC/i a-Si/n+a-SiC Hetero-Junction Photo-Transistor with High Gain and High Speed

C. Y. Chang, K. C. Chang, Y. K. Fang, S. C. Jwo (1.Semiconductor and System Laboratories National Cheng Kung University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-11-3] Improved Reliability in Amorphous Silicon Thin Film Transistors

Y. Kaneko, A. Sasano, T. Tsukada, R. Oritsuki, K. Suzuki (1.Central Research Laboratory, Hitachi, Ltd., 2.Mobara Works, Hitachi, Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-11-4] Amorphous Silicon Photoconductive Contact Image Sensor

Tamio Saito, Kouhei Suzuki, Toshio Nakai, Yoshiyuki Suda, Satoshi Takayama, Kenichi Mori, Osamu Shimada, Kenji Sasaoka, Tatsuya Sakano, Yoshikatsu Fukumoto, Kuniaki Ambo (1.Functional Devices Lab. R&D Center, Electronic Packaging & Assembly Development Center, Household Appliances Eng. Lab.; Toshiba Corp.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-3-6] Boron Heavy Doping and Simultaneous Doping with Boron and Oxygen for Si Molecular Beam Epitaxy

Toru Tatsumi, Naoaki Aizaki (1.Fundamental Research Laboratories, NEC Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[A-3-7] Selective Epitaxial Growth of Si and in Situ Deposition of Amorphous- or Poly-Si for Recrystallisation Purposes

L. KARAPIPERIS, G. GARRY, D. DIEUMEGARD (1.Laboratoire Central de Recherches, THOMSON-CSF)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-2-6] High-gain Cross-current Tetrode MOSFET/SIMOX and Its Application

Yasuhisa Omura, Katsutoshi Izumi (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-3-5] Inversion-type N-channel MOSFET Using Antiphase-domain Free Cubic-SiC Grown on Si(100)

K. Shibahara, T. Saito, S. Nishino, H. Matsunami (1.Department of Electrical Engineering, Kyoto University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-3-6] Selectively Grown Non-Alloyed Ohmic Contacts to n-GaAs

Yasuro Yamane, Yasuo Takahashi, Hiromu Ishii, Masahiro Hirayama (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-3-7] A Thermal Pulse Model of Ion Enhanced Chemical Etching: InP/Cl2

S. C. McNevin (1.ATT-Bell Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download