[B-5-3] Compact Bipolar Transistor Model for CACD, with Accurate Description of Collector Behaviour

H. C. de Graaff, W. J. Kloosterman, T. N. Jansen (1.Philips Research Laboratory)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] High Current Gain Amorphous SiC npn HBT with Temperature Stable Current Gain

Kimihiro SASAKI, Seijiro FURUKAWA (1.Department of Applied Electronics, Graduate School of Sic. & Eng., Tokyo Inst. of Tech.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] Peripheral Capacitor Cell with Fully Recessed Isolation for Megabit DRAM

K. Tsukamoto, M. Nagatomo, Y. Okumura, T. Ogawa, Y. Matsuda, S. Osaki, T. Matsukawa (1.LSI R&D Lab., Mitsubishi Electric Corp.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Doping of Trench Capacitors for 4 Megabit DRAMs

H. Binder, H. Geiger, R. Kakoschke, H. M. Muhlhoff, S. Rohl (1.Siemens AG, Central Research and Development, Components Division)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] Decrease in Trenched Surface Oxide Leakage Currents by Rounding Off Oxidation

Keitaro Imai, Kikuo Yamabe (1.VLSI Res. Center, Toshiba Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4] On-Chip Supply Voltage Conversion System and Its Application to a 4Mb DRAM

Yohji WATANABE, Shigeyoshi WATANABE, Takashi OHSAWA, Tohru FURUYAMA, Kazunori OHUCHI (1.VLSI Research Center and Semiconductor Device Engineering Laboratory Toshiba Corp.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] Effective Funneling Length in Alpha-Particle Induced Soft Errors

E. TAKEDA, K. TAKEUCHI, E. YAMASAKI, T. TOYABE, K. OHSHIMA, K. ITOH (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp., 3.Device Development Center, Hitachi Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] High-Density CCD Video-Memories: Physics and Technology

J. W. Slotboom, K. Osinski, G. J. T. Davids, H. G. R. Maas, A. Slob, K. E. Kuijk, B. Jansen (1.Philips Research Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] A 7 ns/350 mW 16Kb Hi-BiCMOS Static RAM

Makoto SUZUKI, Hisayuki HIGUCHI, Suguru TACHIBANA, Atsuo WATANABE, Takahide IKEDA, Masanori ODAKA (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi Research Laboratory, Hitachi Ltd., 3.Device Development Center, Hitachi Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-7-4] An EPROM Cell Structure for EPLDs Compatible with Single Poly Gate Process

Kuniyoshi YOSHIKAWA, Seiichi MORI, Norihisa ARAI (1.Semiconductor Device Engineering Laboratory, Toshiba Corporation, 2.Toshiba Microcomputor Engineering Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download