[B-7-5] A Novel EPROM Device Using Focused Boron Ion Beam Implantation

Shoji Shukuri, Yasuo Wada, Takaaki Hagiwara Kazuo Komori, Masao Tamura (1.Central Research Laboratory, Hitachi, Ltd., 2.Musashi Works, Hitachi, Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] Hot Electron Transistors

John R. Hayes (1.Bell Communications Research, Inc.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-4-2] Negative Differential Mobility and Drift Velocity Overshoot in Single Quantum Well of AlGaAs/GaAs/AlGaAs Heterostructure

K. Miyatsuji, H. Tanimoto, C. Hamaguchi (1.Department of Electronics, Faculty of Engineering, Osaka University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-4-3] Ballistic Transport of Quasi-Two-Dimensional Electron Gas at AlGaAs/GaAs Interface

K. Yokoyama, M. Tomizawa, A. Yoshii (1.NTT Electrical Communications Laboratories)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-4-4] Energy Bands and Stable Structures of Ultra-Thin- Layer Semiconductor Superlattices

Noriaki Hamada, Shuhei Ohnishi, Atsushi Oshiyama (1.Fundamental Research Laboratories, NEC Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-5-1] Resonant-Tunneling Hot Electron Transistors (RHET): Potential and Applications

Naoki Yokoyama (1.Fujitsu Limited)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] GaAs Inversion-Base Bipolar Transistor (GaAs IBT): Future Transistor of Completely New Principle

Kazuhiko Matsumoto, Yutaka Hayashi, Nobuo Hashizume, Takafumi Yao, Toshiaki Kinosada (1.Electrotechnical Laboratory)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] The New High Speed Device: The TEG-base Transistor

C. Y. Chang, W. C. Liu, M. S. Jame, Y. H. Wang (1.Semiconductor and System Laboratories National Cheng Kung University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-5-4] Self-Aligned AlGaAs/GaAs HBTs and 35 ps LCML Ring Oscillators Fabricated by Mg and P Double Implantation

K. Morizuka, M. Asaka, N. Iizuka, K. Tsuda, J. Yoshida, J. Akagi, T. Kobayashi, Y. Ashizawa, M. Azuma (1.Toshiba Research and Development Center)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] Novel Heterostructure Transistors with Extremely Small Separation between Gate and Channel

M. S. Shur, J. K. Abrokwah, R. R. Daniels, D. K. Arch, N. C. Cirillo, Jr (1.Department of Electrical Engineering, University of Minnesota, 2.Physical Sciences Center, Honeywell inc.)

1986 International Conference on Solid State Devices and Materials |PDF Download