136件中(101 - 110)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
次へ »

[S-II-1] Recent Advance in Multilevel Interconnection

Hiroaki Nakamura (1.NTT LSI Laboratories)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-2] Properties of Direct-Silicided WSi2 Films

A. TANIKAWA、H. OKABAYASHI (1.Microelectronics Res. Labs., NEC Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-3] Silicided Shallow Junction Formation for Scaled-down CMOS Devices

Kiyonori OHYU、Tadashi SUZUKI、Nobuyoshi NATSUAKI、Yasuo WADA (1.Central Research Laboratory, Hitachi, Ltd.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-4] Degradation of MOS Characteristics Caused by Internal Stresses in Gate Electrodes

NAOKI YAMAMOTO (1.CENTRAL RESEARCH LABORATORY, HITACHI, LTD.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-5] Low Resistivity Tungsten/Titanium-Silicide/Silicon Contact for Submicron VLSI

Jyuro Yasui、Shin-ichi Ogawa、Takehito Yoshida、Yasuaki Terui (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-6] Impurity Effect on Reduction in Thermal Stress of Titanium Silicides

K. Suguro、S. Shima (1.VLSI Research Center, Toshiba Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-7] Current Status of Developments of Oxide Superconductors

K. Kitazawa、S. Uchida、H. Takagi、K. Kishio、T. Hasegawa、S. Tanaka、K. Fueki (1.University of Tokyo, Faculty of Engineering)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-8] Mo-Silicides Bias-Sputtering and Its Application to Thermally-Stable, Via-Hole-Filled Contact Formation

T. MOGAMI、H. OKABAYASHI、K. KAJIYANA、K. UDA、M. MORIMOTO、H. HOSHINO (1.Microelectronics Res. Labs. and Resources & Environ. Prot. Res. Labs., NEC Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-9] Low Resistive, High Aspect Ratio Via-Hole Filling System Completely Planarized by Selective W Deposition and Subsequent Etch-Back

K. Shiozaki、K. Mitsuhashi、K. Ohtake、M. Koba (1.Central Research Laboratories, Sharp Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-10] Planarization Mechanism in Flowage Bias Sputter Method

K. Kamoshida、H. Nakamura (1.NTT Electrical Communications Laboratories)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

136件中(101 - 110)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
次へ »