[B-7-2] Electron-Beam Exposure Epitaxy (EBE-Epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures

Hee Chul LEE、Tanemasa ASANO、Hiroshi ISHIWARA、Seigo KANEMARU、Seijiro FURUKAWA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-3] Improvement in Conversion Efficiency of MOCVD GaAs Solar Cells using AlGaAs Buffer Layers

S. Ochi、N. Hayafuji、N. Ogasawara、M. Kato、K. Mitsui、K. Yamanaka、T. Murotani (1.LSI R&D Laboratory, Mitsubishi Electric Corp.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-4] Nb/Compound Semiconductor Heterostructures Epitaxially Grown by Interrupted Electron Beam Deposition

Masayoshi TONOUCHI、Koichi HASHIMOTO、Yoshiyuki SAKAGUCHI、Sadamu KITA、Takeshi KOBAYASHI (1.Faculty of Engineering Science, Osaka University)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-1] The Characterization of P-MOS FET Fabricated on SOI with Controlled Crystal Orientation

K. Shirakawa、M. Maekawa、O. Yamazaki、H. Tsuji、M. Koba (1.Central Research Laboratories, SHARP Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-2] MOS-FETs Fabricated by SPE-SOI Technology

K. Kusukawa、M. Moniwa、E. Murakami、M. Miyao、T. Warabisako、Y. Wada (1.Central Research Laboratory, Hitachi Ltd.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-3] Seed Shape Dependence of Si Solid Phase Epitaxy

Eiichi Murakami、Masahiro Moniwa、Kikuo Kusukawa、Masanobu Miyao、Terunori Warabisako、Yasuo Wada (1.Central Research Laboratory, Hitachi, Ltd.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-4] SOI Recrystallization using a Multiply Separated Seed Structure

S. Kambayashi、T. Inoue、M. Kemmochi、I. Higashinakagawa、T. Yoshii (1.VLSI Research Center, Toshiba Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-5] Selective Growth of Nuclei on Amorphous Substrates

T. Yonehara、Y. Nishigaki、H. Mizutani、S. Kondoh、K. Yamagata、T. Ichikawa (1.Research Center, Canon Inc.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-1] The Effect of Charge Build-up on Gate Oxide Breakdown during Dry Etching

Kazuyuki TSUNOKUNI、Kazuo NOJIRI、Sumi KUBOSHIMA、Kado HIROBE (1.Musashi Works, Hitachi, Ltd.、2.Hitachi Microcomputer Engneering, Ltd.、3.Kanagawa Works , Hitachi, Ltd.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-2] Electron Spin Resonance Study of a New Positively Charged Defect in Device Oxides Damaged by Soft X-Rays

B. B. Triplett、T. Takahashi、K. Yokogawa、T. Sugano (1.Dept. of Electronic Engineering, University of Tokyo、2.Intel Researcher in Residence、3.Nippon Steel Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード