[A-3-1] Improved Bipolar-Mode MOSFETs(IGBT) with Self-Aligning Technique and Wafer Bonding(SDB) -Why is the Bipolar-Mode MOSFET SOA Large?-

Akio NAKAGAWA、Yoshihiro YAMAGUCHI、Kiminori WATANABE (1.Toshiba Research & Development Center)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] An NPN Transistor Fabricated by Silicon Wafer Direct-Bonding

Masaki ATSUTA、Tsuneo OGURA、Akio NAKAGAWA、Hiromichi OHASHI (1.Toshiba Research and Development Center)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] Vertical-Type Amorphous-Silicon MOSFET IC's

Hiroyuki Okada、Yasutaka Uchida、Masakazu Arai、Shunri Oda、Masakiyo Matsumura (1.Department of Electrical and Electronic Engineering, Tokyo Institute of Technology、2.Faculty of Engineering, Takushoku University)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-4] Peripheral Drive Circuits for Poly-Si TFT LCD

J. OHWADA、M. TAKABATAKE、H. KAWAKAMI、Y. A. ONO、A. MIMURA、K. ONO、N. KONISHI、T. SUZUKI、AND K. MIYATA (1.Hitachi Research Laboratory, Hitachi, Ltd.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-5] High Performance Superthin Film Transistor (SFT) with Twin Gates

Hisao HAYASHI、Michio NEGISHI、Takefumi OHSHIMA、Takashi NOGUCHI、Yuji HAYASHI、Toshikazu MAEKAWA、Takeshi MATSUSHITA (1.R & D Department, Semiconductor Group, SONY Corp.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-6] 6000V Gate Turn-Off Thyristor (GTO) with N-Buffer and New Anode Short Structure

Tsuneo Ogura、Mitsuhiko Kitagawa、Hiromichi Ohashi、Akio Nakagawa (1.Research and Development Center and Tamagawa Works, Toshiba Corp.)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-1] A New Thermostable Ohmic Contact to n-GaAs -n+-Si/n-GaAs Structure-

Tanemasa ASANO、Tsuyoshi FUKADA、Seijiro FURUKAWA、Hiroshi ISHIWARA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] Low-Resistance Non-Alloyed Contacts to n-GaAs Using InAs/Graded InGaAs/GaAs Structure

Takumi NITTONO、Hiroshi ITO、Osaake NAKAJIMA、Tadao ISHIBASHI (1.NTT Electrical Communications Laboratories)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-3] Analysis of Planar Channeling Effects on the Threshold Voltage Uniformity of GaAs MESFETs Using Stereographic Projection

Hitoshi MIKAMI、Naotaka UCHITOMI、Nobuyuki TOYODA (1.VLSI Research Center, Toshiba Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-4] Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam

Jin-Zhong YU、Tamio HARA、Takashi YOSHINAGA、Manabu HAMAGAKI、Yoshinobu AOYAGI、Susumu NAMBA (1.The Institute of Physical and Chemical Research (RIKEN)、2.Institute of Semiconductors, Chinese Academy of Sciences、3.Central Research Laboratory, Tokyo Electron Limited)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード