[PB3-5] Film Thickness Dependence of TDDB Characteristics for Thermal Oxide

Yoshio OZAWA、Kikuo YAMABE (1.ULSI Research Center, Toshiba Corporation)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB3-6] Gate Oxide Deterioration Caused by Organic Contamination onto the Oxide

Koichi HASHIMOTO、Kyoko EGASHIRA、Miki SUZUKI、Daisuke MATSUNAGA (1.ULSI Development Division FUJITSU LIMITED)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB4-1] Photoluminescence of Si1-xGex/Si Quantum Well Structures

Koichi Terashima、Michio Tajima、Taeko Niino、Toru Tatsumi (1.Microelectronics Research Laboratories, NEC Corporation、2.Institute of Space and Astronautical Science)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB4-2] Anomalous Si Incorporation into MBE-Grown Ge on Si(111)

K. SUGII、S. ISHIZAWA、Y. KOBAYASHI、H. HIBINO、M. SEKI (1.NTT Basic Research Laboratories、2.NTT Advanced Technologies)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB4-3] Current Density Dependence of Microstructure and Lattice Expansion in Porous Silicon Layers Prepared by Anodization

Kuniko TAKEMOTO、Hiroshi SUGIYAMA、Osamu NITTONO (1.Department of Metallurgical Engineering, Tokyo Institute of Technology、2.Photon Factory, National Laboratory for High Energy Physics)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB4-4] Novel Epitaxial Growth Technology of Si1-xGex Films by in situ Rapid Thermal Chemical Vapor Deposition

Kinya ASHIKAGA、Hisashi FUKUDA、Seigo OHNO (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB4-5] Mass Transport Mechanism of Molten Metal in Excimer Laser Induced Plug Formation for Submicron Interconnection

Ryoichi MUKAI、Masako IIZUKA、Hiroshi KUDO、Motoo NAKANO (1.Fujitsu Limited, Advanced Technology Division)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB4-6] High Hole Mobility p-channel MOSFET's Using MOS-gated Si/Si1-xGex Heterostructures

J. C. Sturm、P. M. Garone、V. Venkataraman (1.Department of Electrical Engineering Princeton University)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB4-7] A Novel Method of Reliable Formation of Wide Bandgap Microcrystalline Emitter for Si-HBT by a-SiC Modification

K. SASAKI、K. YOSHIDA、T. MIYAJIMA、S. FURUKAWA (1.Department of Applied Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-C-1] Atomic-Scale Chemical Characterization, Control and Synthesis Semiconductor Surfaces and Interfaces

F. J. Grunthaner (1.Center for Space Microelectronics Technology Jet Propulsion Laboratory, California Institute of Technology)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

262件中(81 - 90)

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