[PA2-7] The Effect of Ion Shower Doping Conditions on Electrical Properties of Amorphous Silicon and Thin Film Transistors

R. Kakkad、T. Shimano、N. Ibaraki (1.Toshiba Corporation, Electron Device Engineering Laboratory)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA2-8] Bias-Stress-Induced Stretched-Exponential Time Dependence of Charge Injection and Trapping in Amorphous Silicon Thin-Film Transistors

F. R. Libsch、J. Kanicki (1.IBM Research Division, Thomas J. Watson Research Center)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA2-L9] Subthreshold Slope in Ultra Thin-Film SOI MOSFET's and Its Two-Dimensional Analytical Modeling down to 0.1μm Gate Length

H. O. Joachim、Y. Yamaguchi、K. Ishikawa、T. Nishimura、K. Tsukamoto (1.Mitsubishi Electric Corporation, LSI Laboratory)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA2-L10] Impact of Low-Energy Ion-Implantation on Deep-Submicron Phosphorus-LDD nMOSFETs

Tetsuo Izawa、Koh Watanabe、Seiichiro Kawamura (1.Electron Device Group, FUJITSU LIMITED)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA2-L11] Silicon Nitride Film for High-Mobility Thin-Film Transistor by Hybrid-Excitation Chemical Vapor Deposition

Shigeichi YAMAMOTO、Masatoshi MIGITAKA (1.Toyota Technological Institute)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA3-1] An Analytical Model for Substrate and Gate Current of Stressed SC-PMOSFET in the Saturation Region

Kwang Sun Yang、Jong Tae Park、Bong Ryul Kim (1.Dept. of Electronics Eng., Yonsei University、2.Dept. of Electronics Eng., Incheon University)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA3-2] Determination of the Interface Trap Density in MOSFETs from the Subthreshold Slope Measurement

Jong-Son LYU、Kee-Soo NAM、Choochon LEE (1.Electronics and Telecommunications Research Institute、2.Department of Physics, Korea Advanced Institute of Science and Technology)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA3-3] A Closed-Loop Extraction of the Spatial Distribution of Interface Traps Based on Numerical Model of the Charge-Pumping Experiment

Predrag HABAS、Siegfried SELBERHERR (1.Institute for Microelectronics)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA3-4] Channel Hot-Carrier Programming in EEPROM Devices

Chung-Yu Wu、Yai-Fen Lin、Lih-Chyun Perng、Sen-Huang Huang (1.Institute of Electronics and Department of Electronics Engineering National Chiao-Tung University、2.Hualon Microelectronics Corporation)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA4-1] Lateral Epitaxial Growth of Sputtered Al(110) over SiO2 and Its Electromigration Characteristics

S. Yokoyama、H. Ichikawa、S. Shingubara、M. Koyanagi (1.Research Center for Integrated Systems, Hiroshima University、2.Faculty of Engineering, Hiroshima University)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード