[PD-2-9] A Self-Consistent Analysis of the Coherency of Hot Electron Emitters

M. Gault, H. Matsuura, K. Furuya, P. Mawby (1.Department of Physical Electronics, Tokyo Institute of Technology, 2.Department of Electronic Engineering, University of Wales)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-10] Semi-Insulating, p-type, and n-type Doping in AlSb, GaSb, and AlSb/InAs by a Single Native Defect

Jun Shen, Saied Tehrani, Herb Goronkin, Gary Kramer, Marilyn Adam, John D. Dow (1.Motorola Inc., Phoenix Corporate Research Lab, 2.Department of Physics and Astronomy, Arizona State University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-3-1] Localization of Excitons in AlGaAs/GaAs Quantum Wells Observed in the Time Resolved Photoluminescence Spectroscopy

Yutaka Takahashi, Koji Muraki, Susumu Fukatsu, Satoru S. Kano, Yasuhiro Shiraki, Ryoichi Ito (1.IBM Research, Tokyo Research Laboratory, 2.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 3.Department of Applied Physics, The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-3-2] A New "Binary Buffer Layer" Concept for Applications in the Heteroepitaxy of Highly Mismatched In0.53Ga0.47As on GaAs

Shou-Zen Chang, Si-Chen Lee, Hung-Pin Shiao, Wei Lin, Yuan-Kuang Tu (1.Department of Electrical Engineering, National Taiwan University, 2.Institute of Optical Science, National Central University, 3.Photonic Technology Research, Telecommunication Laboratories, Ministry of Transportation and Communications)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-3-3] Dry Sulfur Passivation of GaAs Surface Using ArF Excimer Laser with H2S

M. Totsuka, N. Yoshida, S. Chichibu, T. Akane, H. Uji, H. Higuchi, S. Matsumoto (1.Department of Electrical Engineering, Faculty of Science and Technology, Keio University, 2.Bentec Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-3-4] Process Induced Defects in InP Produced by Chemical Vapor Deposition of Surface Passivation Dielectrics

T. Hashizume, H. Hasegawa, R. Riemenschneider, H. L. Hartnagel (1.Hokkaido Polytechnic College, 2.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University, 3.Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-3-5] AFM and LFM Observations of Compound Semiconductor Surfaces and Heterointerfaces

Ikuo SUEMUNE, Hidefumi MUKAI (1.Research Institute for Electronic Science, Hokkaido University, 2.Faculty of Engineering, Hiroshima University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-3-6] Metal Overlayer Deposition on Se/GaAs(100)

T. Scimeca, Y. Watanabe, F. Maeda, M. Oshima (1.NTT Interdisciplinary Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-3-7] Novel Step Height Reduction Phenomenon during Alkyl-Desorption Limited Atomic Layer Epitaxial Growth on Vicinal Substrate

S. Goto, J. Ishizaki, T. Fukui, H. Hasegawa (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-3-8] Behavior of Growth Rate in Gas Source Molecular Beam Epitaxial Growth of InP Using Phosphine

B. X. YANG, H. HASEGAWA (1.Research Center for Interface Quantum Electronics Department of Electrical Engineering Hokkaido University)

1993 International Conference on Solid State Devices and Materials |PDF Download