[S-IV-10] Technology Trend of Flash EEPROM

Fujio Masuoka, Koji Sakui (1.Toshiba Corporation ULSI Research Center)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-11] The Novel Capacitor Structure with Polysilicon Grain Hole for Advanced DRAM

Sanggi Yu, Kukjin Chun, Jong Duk Lee (1.Department of Electronics Engineering and Inter-university Semiconductor Research Center Seoul National University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-12] The Disk Shape Stacked Capacitor Cell for 256Mb DRAM

T. Morihara, Y. Ohno, T. Katayama, T. Eimori, S. Satoh, H. Miyoshi (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-13] A New Stacked SMVP(Surrounded Micro Villus Patterning) Cell for 256 Mega and 1 Giga bit DRAMs

S. P. Sim, S. T. Kim, T. H. Ahn, W. S. Paik, J. Y. Noh, K. H. Kim, S. H. Kang, J. G. Lee, J. Y. Yoon, C. S. Choi, C. G. Hwang (1.Advanced Technology Development Center, Memory Division, Semiconductor Business, SAMSUNG Electronics Co. Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-14] A Two-Terminal (T2) Cell for Ultra High Density DRAMs

Takashi YAMADA, Yohji WATANABE, Ikuo FUJIWARA, Tsuneaki FUSE, Fumio HORIGUCHI, Shigeyoshi WATANABE, Fujio MASUOKA (1.ULSI Research Center, TOSHIBA Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-15] Bird's-Beak-Controlled Poly Buffered Locos Isolation (BPBL) Technology for 256Mb DRAM

W. S. Yang, M. U. Hwang, W. S. Paik, W. S. Lee, C. S. Choi, C. G. Hwang (1.Advanced Technology Development Center, Memory Division, Semiconductor Business, SAMSUNG Electronics Co. Ltd)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-6-1] Interwell Coupling in Strained Si1-xGex/Si Quantum Wells

S. Fukatsu, Y. Shiraki (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-6-2] Strong Direct Band-Edge Photoluminescence from Si/Si1-xGex/Si Quantum Well Grown by Molecular Beam Epitaxy with Post Annealing

Akio NISHIDA, Kiyokazu NAKAGAWA, Toshikazu SHIMADA, Susumu FUKATSU, Yasuhiro SHIRAKI (1.Central Research Laboratory, Hitachi Ltd., 2.Research Center of Advanced Science and Technology (RCAST), The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-6-3] Exciton Diffusion and Carrier Collection in Strained Si1-xGex/Si Quantum Wells

S. Fukatsu, K. Muraki, Y. Takahashi, Y. Shiraki (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-6-4] Electron Transitions by Normally Incident Light in Si1-xGex/Ge Multiple Quantum Wells Grown on Si(100)

Chanho Lee, S. K. Chun, Kang L. Wang (1.Device Research Laboratory, 64-127B Engineering IV Electrical Engineering Department University of California)

1993 International Conference on Solid State Devices and Materials |PDF Download

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