[PC-1-13] Effects of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering

Shin Yokoyama, Hiroshi Ichikawa, Yoshiyuki Ichikawa, Mitsumasa Koyanagi (1.Research Center for Integrated Systems, Hiroshima University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-14] Thermal Stability of an Interconnect of TiN/Cu/TiN Multilayered Structure

Y. Igarashi, T. Yamanobe, T. Yamaji, S. Nishikawa, T. Ito (1.Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-15] In-situ Rapid Thermal Processing for Collimated PVD Titanium as a Barrier Layer for Blanket CVD Tungsten

Osamu YAMAZAKI, Kazuyo NAKAMURA, Hiromi SAKAMOTO, Shigeo OHNISHI, Keizo SAKIYAMA (1.VLSI Development Laboratories, IC Group, SHARP Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-16] Al(111)/CVD-TiN(111) Stacked Film Formation Technique with High Aspect-Ratio Contact Hole Filling for Highly Reliable Interconnects

T. Kaizuka, H. Shinriki, N. Takeyasu, T. Ohta (1.LSI Research Center, Kawasaki Steel Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-17] A Highly Reliable Interconnection with Collimated Sputtering of Barrier Layer and High Temperature Sputtering of Al Alloy on Silicide Junction

Y. Takegawa, H. Kotaki, K. Mitsuhashi, J. Takagi, T. Ushiro, Y. Akagi (1.Central Research Laboratories, Research and Analysis Center, Sharp Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-18] Accelerated Electromigration Testing of Giant-Grain Copper Interconnects under Extremely Large Current Stress

T. Hoshi, H. Yamada, T. Takewaki, T. Shibata, T. Ohmi, T. Nitta (1.Department of Electronic Engineering, Tohoku University, 2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, 3.Device Development Center, Hitachi Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-19] Impact of Dopant-Redistribution at TiSi2/Si Interface and a Doubly-S/D-Ion-Implanted-SALICIDE Structure for Subhalfmicron CMOS

A. Ohtomo, J. Ida, K. Kai, I. Aikawa, K. Yonekawa, A. Kita, K. Nishi (1.VLSI Research and Development Center OKI Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-20] A Low Parasitic Capacitance Scheme by Thermally Stable Titanium Silicide Technology for High Speed CMOS

Takehito Yoshida, Shinichi Ogawa, Akio Miyajima, Kousaku Yano (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-21] CVD Method of Anti-Reflective Layer Film for Excimer Laser Lithography

Tetsuo Gocho, Tohru Ogawa, Masakazu Muroyama, Jun-ich Sato (1.ULSI R&D Laboratories, SONY Corporation Atsugi Technology Center)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-22] High-Reliability Lithography Performed by Ultrasonic and Surfactant-Added Developing System

T. Iwamoto, H. Shimada, S. Shimomura, M. Onodera, T. Ohmi (1.Department of Electronics, Faculty of Engineering, Tohoku University, 2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

365 results (181 - 190)

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