[C-2-3] Device Simulation of a Thin-Film SOI Power MOSFET for Structure Optimization

Satoshi Matsumoto, Hideo Yoshino (1.NTT Interdisciplinary Research Labs. and, 2.NTT Electronics Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Multi-drain/Multi-collector Structured Full-Swing Complementary BiCMOS Buffers

M. EL-Hady, H. Haddara, I. M. Hafez, M. H. ELSaid (1.Electronics and Communication Engineering Department, Ain Shams University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Ultimate Manipulation of Atoms and Molecules A New Project

Kazunobu Tanaka (1.National Institute for Advanced Interdisciplinary Research)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Substrate Orientation Dependence of Fe Doping in MOVPE-Grown InP

Tatsuya TAKEUCHI, Susumu YAMAZAKI (1.Fujitsu Laboratories Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] STM Study of Monolayer Steps on GaAs Vicinal Surfaces Grown by MOCVD

Makoto Kasu, Naoki Kobayashi (1.NTT Basic Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Step Motion and Structure Transition on InAs and GaAs(001) Surfaces Observed by Scanning Tunneling Microscopy

Hiroshi YAMAGUCHI, Yoshiji HORIKOSHI (1.NTT Basic Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-3-5] Mechanism of Multiatomic Step Formation during MOCVD Growth of GaAs on (001) Vicinal Substrate Studied by Atomic Force Microscopy

Jun-ya Ishizaki, Shu Goto, Motoya Kishida, Takashi Fukui, Hideki Hasegawa (1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] In-Situ Control of Strained Heterostructure Growth

Yasuyuki Kobayashi, Naoki Kobayashi (1.NTT Basic Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-4-2] In Situ Observation of MBE-Grown GaAs(001) Surfaces Using Surface Photo-Absorption and Reflectance Difference

Kunihiko UWAI, Yoshiharu YAMAUCHI, Naoki KOBAYASHI (1.NTT Basic Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-4-3] In-Situ Surface Photo-Absorption Study of Surface Structure and Desorption Dynamics for As-Stabilized GaAs MOCVD Surface

Naoki Kobayashi, Yoshiharu Yamauchi, Kunihiko Uwai (1.NTT Basic Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

365 results (91 - 100)

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