[LC-15] Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices

H. Hongo, Y. Miyamoto, J. Suzuki, M. Funayama, K. Furuya (1.Department of Electrical and Electronics Engineering, Tokyo Institute of Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

[LC-16] Measurements on a High-Tc RSFQ Circuit at 4.2K

Z. G. Ivanov, V. K. Kaplunenko, E. A. Stepantsov, E. Wikborg, T. Claeson (1.Department of Physics, Chalmers University of Technology, 2.Institute of Radioelectronics and Engineering, 3.Institute of Crystallography, 4.Ericsson Telecom)

1993 International Conference on Solid State Devices and Materials |PDF Download

[LC-17] High-Efficiency and High-Power Ku-Band AlGaAs/GaAs HBTs

M. Sakai, T. Shimura, S. Izumi, H. Matsuoka, K. Kosaki, R. Hattori, M. Komaru, H. Takano, M. Otsubo, S. Mitsui (1.Optoelectronic and Microwave Devices Lab. Mitsubishi Electric Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[LC-18] Extremely Low-Noise InP-Based Lattice-Matched HEMT Grown by MOCVD

Shinobu Fujita, Takao Noda, Aki Wagai, Shigehiro Hosoi, Yasuo Ashizawa (1.Research and Development Center, Toshiba Corporation, 2.Microelectronics Center, Toshiba Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] A Poly-Si TFT Process for High Speed and Low Voltage CMOS Circuits

Y. Fukushima, T. Ueda, H. Komiya (1.SHARP CORPORATION)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-6-2] High Performance Polysilicon Thin-Film Transistors Using Very Thin Sputtered Gate Oxide Films

Noriyoshi Yamauchi, Nobuhiko Kakuda, Tomoko Hisaki (1.NTT Interdisciplinary Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-6-3] Thin-Film Transistor Characteristics Fabricated on Nucleation-Controlled Poly-Si Films by Surface Steps

Tanemasa Asano, Kenji Makihira, Hiroomi Tsutae (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-6-4] A Novel Model for Lowering of Grain-Boundary Potential Barrier in High Mobility Poly-Si TFTs

Seiiti SHIRAI, Tadashi SERIKAWA (1.NTT Interdisciplinary Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-6-5] Rapid Thermal Annealing Technique for Poly-Si TFTs

Ichio YUDASAKA, Hiroyuki OHSHIMA (1.SEIKO EPSON Corporation TFT/MIM Research Laboratory)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-6-6] The Effect of Ion Doped Hydrogen on the Quality of Channel Region of a-Si TFTs

T. Shimano, R. Kakkad, N. Ibaraki (1.Toshiba Corporation Electron Device Engineering Laboratory)

1993 International Conference on Solid State Devices and Materials |PDF Download

365 results (331 - 340)

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