[A-4-5] A Two-Step Tunneling Model for the Stress Induced Leakage Current in Thin Silicon Dioxide Films

Naoki Yasuda, Nalin Patel, Akira Toriumi (1.ULSI Research Labs, R&D Center, Toshiba Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-1] High Dielectric Constant Ferroelectric Thin Films for DRAM Applications

J. Lee, C. Sudhama, J. Kim, R. Khamankar (1.Microelectronics Research Center University of Texas)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-2] Optimum Electrode Materials for Ta2O5 Capacitors at High and Low Temperature Processes

Hideaki MATSUHASHI, Satoshi NISHIKAWA (1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-3] Electrical Characterization of RTN-Poly-Si/CVD-Ta2O5/CVD-TiN Stacked DRAM Capacitors

V. K. Mathews, G. S. Sandhu, N. Sandler, P. C. Fazan (1.Micron Semiconductor, Inc., 2.LAM Research Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-4] Behaviro of Substrate-Originating Si Atoms during Chemical Vapor Deposition and Subsequent Active Oxygen Annealing of Tantalum Pentoxide Film

Satoshi TANIMOTO, Yushi SHICHI, Koichi KUROIWA, Yasuo TARUI (1.Electronics Research Laboratory, Nissan Motor Co., Ltd., 2.Surface Analysis Section, Nissan ARC., Ltd., 3.Department of Electronic Engineering, Tokyo University of Agriculture and Technology, 4.The School of Science and Engineering, Waseda University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-5] Highly Reliable Ultra-Thin Ta2O5 Capacitor Process Technology by Using O2-Plasma Annealing Below 400℃

Hiroshi Suzuki, Satoshi Kamiyama, Hirohito Watanabe, Akira Sakai, Akihiko Ishitani (1.Thin Film Process Development Laboratory ULSI Device Development Laboratories, NEC Corporation, 2.Micro-electronics Research Laboratory, NEC Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-6] Improved Resistance to Oxidation of Silicon Nitride by In-Situ Annealing for the NO Capacitor Dielectric Film

S. H. Kang, S. T. Kim, D. H. Lee, K. H. Kim, S. T. Ahn (1.Advanced Technology Center, Samsung Electronics Co. LTD.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-7] Preparation of Pb(Zr, Ti)O3 Thin Films on (Pb, La)TiO3 Buffer Layer by Multi-Ion-Beam Sputtering

Isaku KANNO, Shigenori HAYASHI, Takeshi KAMADA, Masatoshi KITAGAWA, Takashi HIRAO (1.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-8] Oxygen Enhanced Dissociation Effect on MOCVD PZT Thin Film

Shigeo Ohnishi, Masaya Komai, Kazuya Ishihara, Keizo Sakiyama Masaru Shimizu, Tadashi Shiosaki (1.VLSI Development Laboratory, IC-Group, SHARP Corp., 2.Department of Electronics, Faculty of Engineering, Kyoto University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-9] DRAM Technology for Giga-bit Age

Masahide Takada (1.Microelectronics Res. Labs., NEC Corp.)

1993 International Conference on Solid State Devices and Materials |PDF Download