[S-II-16] Three Dimensional Molecular Dynamics Study of Void Electromigration in a Strained Bicrystal with a Grain Boundary

Shoso Shingubara, Taizo Fujii, Isao Utsunomiya, Yasuhiro Horiike (1.Dept. of Electrical Engineering, Hiroshima University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-17] 5000-μm Line-and-Space Planarization Using Chemical Mechanical Polishing

S. Kishii, H. Horie, M. Hoko, Y. Arimoto, T. Ito (1.Fujitsu Laboratories Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-18] Analysis of Anomalously Large Junction Leakage Current of Nickel Silicided N-Type Diffused Layer and Its Improvement

T. Ohguro, T. Morimoto, Y. Ushiku, H. Iwai (1.ULSI Laboratories, Research and Development Center, Toshiba Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-19] Epitaxial CoSi2 Layer Formation Technology on (100) Si and Its Application for Reduced Leakage, Ultra Shallow p+/n Junction

S. Ogawa, J. A. Fair, M. L. A. Dass, E. C. Jones, T. Kouzaki, N. W. Cheung, D. B. Fraser (1.Semiconductor Research Center, Matsushita Electric Co., 2.Varian, Ginzton Research Center, 3.Intel Corporation, 4.Electrical Engineering and Computer Sciences, University of California at Berkeley)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-1] Opto-Electronic Applications of Si/Si1-xGex Heterostructures

J. C. Sturm, X. Xiao, Q. Mi, A. St. Amour, L. C. Lenchyshyn, M. L. W. Thewalt (1.Department of Electrical Engineering Princeton Opto-Electronic Materials Center (POEM) Princeton University, 2.Department of Physics Simon Fraser University, 3.Intel Corp.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-2] Modulation-Doped High-Mobility Si/SiGe Heterostructures for Device Applications

Ulf Konig, Friedrich Schaffler (1.Daimler-Benz Research Center)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-3] Silicon MBE on Hydrogen Plasma Cleaned Substrates

E. Hammerl, W. Hansch, W. Kiunke, I. Eisele, J. Ramm, E. Beck (1.Institut fur Physik, Fakultat Elektrotechnik Universitat der Bundeswehr Munchen, 2.Balzers Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-4] Selforganizing Growth of Nanometer Mesa Structures on (100)-Silicon Substrates

H. Gossner, E. Hammerl, F. Wittmann, W. Hansch, H. Baumgartner, I. Eisele, T. Heinzel, H. Lorenz (1.Universitat der Bundeswehr Munchen, 2.Ludwig-Maximilian-Universitat Munchen)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-5] Impact of High-Precision RF-Plasma Control on Very-Low-Temperature Silicon Epitaxy

Masaki HIRAYAMA, Wataru SHINDO, Tadahiro OHMI (1.Department of Electronics, Faculty of Engineering, Tohoku University, 2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-2-1] Application and Modelling of Synchronization of Nucleation by Means of Intermittent Radiant Heating

Mats I. LARSSON, Goran V. HANSSON (1.Department of Physics and Measurement Technology, Linkoping University)

1993 International Conference on Solid State Devices and Materials |PDF Download