[S-III-6] Spatially Resolved Characterization of the Si/SiO2 System Using Conducting Atomic Force Microscopy

Murrell M. P., Welland M. E., Wong T. M. H. (1.University of Cambridge Department of Engineering)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-III-7] Characterization and Control of Native Oxide on Silicon

Mizuho MORITA, Tadahiro OHMI (1.Department of Information Science, Graduate School of Information Sciences, Tohoku University, 2.Department of Electronic Engineering, Faculty of Engineering, Tohoku University, 3.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-III-8] The Initial Stage of Epitaxial Growth of Al on the Si(111) Surface Observed by Scanning Tunneling Microscopy

Masamichi YOSHIMURA, Katsuya TAKAOKA, Takafumi YAO (1.Department of Electrical Engineering, Hiroshima University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-III-9] Native Oxides on Si-Surfaces of Deep-Submicron Contact-Hole-Bottoms

N. Aoto, M. Nakamori, H. Hada, T. Kunio, E. Ikawa (1.ULSI Device Development Laboratories, Microelectronics Research Laboratories NEC Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] The New Round World of Carbon Chemistry and Materials Science

H W Kroto, K Prassides, R Taylor, D R M Walton, M Endo (1.University of Sussex, 2.Shinshu University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] Si Grain-Free Highly Conductive Microcrystalline SiC Films Prepared by Using Organic Silane Gas

K. Sasaki, T. Miyajima, H. Hosoya, S. Furukawa (1.Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

Akihiko KIKUCHI, Hiroyuki HOSHI, Katsumi KISHINO (1.Dept. of Electrical & Electronics Engineering, Sophia University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates

Masaki NAGAHARA, Seiro MIYOSHI, Hiroyuki YAGUCHI, Kentaro ONABE, Yasuhiro SHIRAKI, Ryoichi ITO (1.Department of Applied Physics, The University of Tokyo, 2.Research Center for Advanced Science and Technology, The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-1-5] Selective, Maskless Growth of InSb on a Selenium-Treated GaAs by Molecular Beam Epitaxy

Yoshio Watanabe, Tom Scimeca, Fumihiko Maeda, Masaharu Oshima (1.NTT Interdisciplinary Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] Growth of GaAs on Si(100) with (GaAs)1-x(Si2)x/GaAs Strained-Layer Superlattice by Migration-Enhanced Epitaxy

Kazuhiko Nozawa, Tatavarti Sudersena Rao, Yoshiji Horikoshi (1.NTT Basic Research Laboratories, 2.Institute of Microstructural Sciences, National Research Council of Canada)

1993 International Conference on Solid State Devices and Materials |PDF Download

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