[PB-2-2] Nucleation Controlled Poly-Si TFT by Selective Doping

T. Katoh、F. Otoi (1.Oki Electric Industry Co., Ltd., LSI Process Technology Dept.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-3] Uniform Performance TFT with Excimer Laser Annealing of Solid Phase Crystallized Poly-Si

N. Kodama、H. Tanabe、K. Sera、K. Hamada、S. Saitoh、F. Okumura、K. Ikeda (1.ULSI Device Development Laboratories, NEC Corporation、2.Functional Device Research Laboratories, NEC Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-4] Hydrogenated Amorphous Silicon Thin Film Transistors Made by Novel Materials

K. C. Hsu、P. Y. Chen、H. T. Hsu、K. C. Wang、T. R. Yew、H. L. Hwang (1.Department of Electrical Engineering, National Tsing-Hua University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-5] Poly-Si TFTs with LDD Structure Fabricated at Low Temperature

Minoru Matsuo、Satoshi Inoue、Tsutomu Hashizume、Hiroyuki Ohshima (1.Seiko Epson Corporation TFT/MIM Research Laboratory)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-6] Improved I-V Characteristics of Poly-Si TFTs with Novel Dual-Buffer Drain Structure

Ching-Fa Yeh、Chyi-Hsiang Chern (1.Institute of Electronics, National Chiao-Tung University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-2-7] Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si TFT's

Y. S. Kim、K. Y. Choi、S. K. Lee、B. H. Min、Y. H. Kim、M. K. Han (1.Department of Electrical Engineering, Seoul National University、2.Department of Electronic Materials Engineering, University of Suwon)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-3-1] A 1.13um2 Memory Cell Technology for Reliable 3.3V 64M NAND EEPROMs

S. Aritome、K. Hatakeyama、T. Endoh、T. Yamaguchi、S. Shuto、H. Iizuka、T. Maruyama H. Watanabe、G. J. Hemink、T. Tanaka、M. Momodomi、K. Sakui、R. Shirota (1.ULSI Research Center, TOSHIBA Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-3-2] Swiched Diffusion Analog Memory for Neural Networks

T. KITAURA、S. SATO、K. NAKAJIMA、J. MUROTA、AND Y. SAWADA (1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-3-3] A New Recessed Channel MOSFET with Selectively Halo-Doped Channel and Deep Graded Source/Drain

Woo-Hyeong Lee、Young-June Park、Jong Duk Lee (1.Inter-University Semiconductor Research Center and Dept. of Electronics Engineering, Seoul National University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-3-4] Elevated Polycide Source / Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug / Collimated PVD-Ti/TiN/Ti / Polycide (APPOCIDE) Contact for Submicron CMOS

H. Kotaki、Y. Takegawa、S. Kakimoto、T. Fukushima、K. Mitsuhashi、J. Takagi Y. Okamoto、Y. Akagi (1.Central Research Laboratories, Research and Analysis Center, Sharp Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

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