[D-2-2] Silicon: Germanium Heterojunction Bipolar Transistors; From Experiment to Technology

B. S. Meyerson, D. L. Harame, M. M. Gilbert, K. T. Schonenberg, T. Tice, B. Scharf (1.IBM Research Division, IBM T. J. Watson Res. Cntr., 2.Analog Devices Inc.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Thermal Runaway Tolerance in Double Heterojunction Bipolar Transistors

Osamu HIDAKA, Kouhei MORIZUKA, Hiroshi MOCHIZUKI (1.Toshiba Research and Development Center)

1994 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Modelling and Fabrication of a P-Channel SiGe-MOSFET with Very High Mobility and Transconductance

T. Vogelsan, F. Hofmann, H. Schafer, L. Risch, K. Hofmann (1.Siemens AG, Central Research and Development BT ACM)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-10-1] High Performance 0.1 μm CMOS Devices

K. F. Lee, R. H. Yan (1.AT&T Bell Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-10-2] Universality of Impact Ionization Rate in 0.1μm Si MOSFET

H. Kurata, Y. Nara, T. Sugii (1.Fujitsu Laboratories Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-10-3] Hot Carrier Effects in Sub-0.1 μm MOSFETs

F. Balestra, T. Matsumoto, T. Shimatani, M. Tsuno, H. Nakabayashi, M. Koyanagi (1.Faculty of Engineering, Tohoku University, 2.Research Center for Integrated Systems, Hiroshima University)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-10-4] Kink Effect in 0.1 μm Bulk Si MOSFETs

T. Matsumoto, F. Balestra, T. Shimatani, M. Tsuno, H. Nakabayashi, M. Koyanagi (1.Faculty of Engineering, Tohoku University, 2.Research Center for Integrated Systems, Hiroshima University)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-11-1] Analytical Calculation of the Subthreshold Slope Increase in Short Channel MOSFET's by Taking the Drift Component into Account

Serge Biesemans, Kristin De Meyer (1.Advanced Silicon Devices Group Interuniversity MicroElectronics Centre (IMEC))

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-11-2] Different Contribution of Interface States and Substrate Impurities to Coulomb Scattering in Si MOS Inversion Layer

Junji KOGA, Shin-ichi TAKAGI, Akira TORIUMI (1.ULSI Research Laboratories, TOSHIBA Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-11-3] A New PMOSFET's Hot-Carrier Degradation Model for Bi-Directional Operation

S. Shimizu, M. Tanizawa, S. Kusunoki, M. Inuishi, N. Tsubouchi (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

340 results (291 - 300)

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