[C-6-4] High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector

Naoyuki Nakada、Masaharu Nakaji、Hiroyasu Ishikawa、Takashi Egawa、Takashi Jimbo、Masayoshi Umeno (1.Department of Electrical and Computer Engineering, Nagoya Institute of Technology、2.Research Center for Micro-Structure Devices, Nagoya Institute of Technology、3.Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-5] High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode

Shuji Nakamura、Masayuki Senoh、Shin-ichi Nagahama、Toshio Matsushita、Takashi Mukai (1.Department of Research and Development, Nichia Chemical Industries, Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-1] Carbon Nanotubes: Electronic Properties and Devices

Phaedon Avouris (1.IBM Research Division, T. J. Watson Center)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-2] Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation (V-PADOX)

Y. Ono、Y. Takahashi、K. Yamazaki、M. Nagase、H. Namatsu、K. Kurihara、K. Murase (1.NTT Basic Research Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-3] Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)

Seiji Horiguchi、Masao Nagase、Kenji Shiraishi、Hiroyuki Kageshima、Yasuo Takahashi、Katsumi Murase (1.NTT Basic Research Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-4] Room Temperature Coulomb Oscillation of a Single Electron Switch with an Electrically Formed Quantum Dot and Its Modeling

Dae Hwan Kim、Jong Duk Lee、Byung-Gook Park (1.Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul Nat'l Univ.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-1] Characteristics of Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots

N. Takahashi、H. Ishikuro、T. Hiramoto (1.Institute of Industrial Science, University of Tokyo、2.VLSI Design and Education Center, Univ. of Tokyo)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-2] Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by AFM Nano-Oxidation Process

Y. Gotoh、K. Matsumoto、V. Bubanja、F. Vazquez、T. Maeda、J. S. Harris (1.Electrotechnical Laboratory MITI、2.Stanford University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-3] Hot Electron Transport in Si-MOSFETs

Toshitsugu Sakamoto、Hisao Kawaura、Takahiro Iizuka、Toshio Baba (1.Fundamental Research Labs., NEC、2.ULSI Device Development Labs., NEC)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-1] Ultrahigh-Speed and Low Power Integrated Circuits Employing Resonant Tunneling Diodes

Koichi Maezawa (1.School of Engineering, Nagoya University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード