[A-8-2] Failure Analysis of Chip Interconnects Using Picosecond Imaging Circuit Analysis

J. A. Kash、Dan Knebel、J. C. Tsang (1.IBM Thomas J. Watson Research Center)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-3] Evaluation of LOCOS Induced Stress Using Raman Spectroscopy with an Al-Mask

Masaki Okuno、Takahiro Kimura、Hiroshi Arimoto (1.Fujitsu Laboratories Limited)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-4] Evaluation of the Semiconductor Heterojunctions Interface Using a Free Electron Laser

Kazuhisa Nishi、Akira Ishizu、Akio Nagai (1.Free Electron Laser Research Institute, Inc.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-1] Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO2/Si Interfaces

Heiji Watanabe、Toshio Baba、Masakazu Ichikawa (1.Fundamental Research Laboratories, NEC Corporation、2.Joint Research Center for Atom Technology, Angstrom Technology Partnership)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-2] Direct Observation of Initial Stage of Oxidation on Si(001) Surface by Scanning Tunneling Microscopy

K. Miki、Y. Kudo、M. Murata、K. Yamabe (1.Electrotechnical Laboratory、2.Institute of Applied Physics, Tsukuba University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-3] Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission

Hiroyuki Kageshima、Kenji Shiraishi (1.NTT Basic Research Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-10-1] Dielectric Degradation Mechanism of SiO2 Examined through First-Principles Calculations: Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field

Isao Kitagawa、Takuya Maruizumi、Jiro Ushio、Katsuhiko Kubota、Masanobu Miyao (1.Advanced Research Laboratory, Hitachi, Ltd.、2.Semiconductor and Integrated Circuits division, Hitachi, Ltd.、3.Central Research Laboratory, Hitachi, Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-10-2] Modeling of Soft Breakdown in Ultrathin Gate Oxides

Wataru Mizubayashi、Hiroshi Itokawa、Seiichi Miyazaki、Masataka Hirose (1.Department of Electrical Engineering, Hiroshima University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-10-3] Monte-Carlo Sphere Model for "Effective Oxide Thinning" Induced Extrinsic Breakdown

Huan-Tsung Huang、Ming-Jer Chen、Jyh-Huei Chen Chi-Wen Su、Chin-Shan Hou、Mong-Song Liang (1.Department of Electronics Engineering, National Chiao-Tung University、2.R&D Department, Taiwan Semiconductor Manufacturing Company)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-10-4] Interface States due to Intrinsic Defects in Si(100)/SiO2

Chioko Kaneta、Takahiro Yamasaki、Toshihiro Uchiyama、Tsuyoshi Uda、Kiyoyuki Terakura (1.Fujitsu Laboratories Limited、2.JRCAT-(ATP, NAIR))

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード