[B-13-2] Measurement of Copper Drift in Methylsilsesquioxane Dielectric Films

Seiji Mukaigawa、Takamaro Kikkawa、Tomoko Aoki、Yasuo Shimizu (1.Research Center for Nanodevices and Systems, Hiroshima University、2.Tonen Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-13-3] New Low k Material "LKD TM" for Al Damascene Process Application

R. Nakata、M. Kawai、N. Yamada、H. Miyajima、K. Higashi、H. Ichinose、S. Seta、Y. Matsui、G. Minamihaba、N. Matsunaga、N. Hayasaka (1.ULSI Process Engineering Laboratory, TOSHIBA CORPORATION)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-14-1] Implantation and Annealing Strategies for Ultra-Shallow Junction Formation

Aditya Agarwal、Hans-J. Gossmann、Anthony T. Fiory (1.Eaton Semiconductor Equipment Operations、2.Bell Laboratories, Lucent Technologies)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-14-2] Two-Dimensional Dopant Profiling of nMOSFETs with Shallow-Extensions Using Electrochemical Etching Technique

Yorinobu Kunimune、Naoharu Nishio、Akira Mineji、Kensuke Yamaguchi、Hiroaki Kikuchi (1.ULSI Device Development Laboratory, NEC Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-14-3] Extraction of Depth-Dependent Lateral Standard Deviation from One-Dimensional Tilted Implantation Profiles

Toshihiko MIYASHITA、Kunihiro SUZUKI (1.Fujitsu Laboratories Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-15-1] Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO2/Si Interface

Kentaro Shibahara、Kazuhiko Egusa、Koji Kamesaki (1.Research Center for Nanodevices and Systems, Hiroshima University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-15-2] Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs

Takayuki Aoyama、Kunihiro Suzuki、Hiroko Tashiro、Yoko Tada、Hiroshi Arimoto (1.Fujitsu Laboratories Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-15-3] Dopant-Induced Defects Formed by Ion Implantation -Dopant Species Dependence-

Fuminobu Imaizumi、Tatsufumi Hamada、Kei Kanemoto、Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-15-4] Photoluminescence of Low-Energy B ± Implanted Silicon under Ultraviolet Light Excitation

Koichi Terashima、Kousuke Miyoshi、Michio Tajima (1.ULSI Device Development Laboratory, NEC Corporation、2.Institute of Space and Astronautical Science)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-11-1] Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?

Boaz Eitan、Paolo Pavan、Ilan Bloom、Efraim Aloni、Aviv Frommer、David Finzi (1.Saifun Semiconductors、2.Dipartimento di Scienze dell'Ingegneria e INFM, Universita' di Modena e Reggio Emilia、3.Tower Semiconductors)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

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