[B-2-4] Novel Impurity Activation Technology Using Gate Poly-Si Oxidation

N. Morosawa、H. Kotaki、S. Kakimoto、M. Yamanaka、K. Ohta、N. Hashizume (1.Advanced Technology Research Laboratories, Sharp Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-5] The Device Degradation Due to Contamination from STI Filling Material

S. J. Hong、M. H. Park、S. H. Hong、H. K. Kang、S. I. Lee (1.Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-1] OMVPE Growth of AlGaInN for UV Light Emitters

Jung Han、Mary H. Crawford (1.Sandia National Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-2] Effects of Strain on Highly-Mismatched AlGaN/GaN Multiple Quantum Wells

Norio Iizuka、Nobuo Suzuki (1.Advanced Discrete Semiconductor Technology Laboratory, Toshiba Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-3] Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry

Takayuki Onozu、Yusaku Inaba、Seiichi Takami、Momoji Kubo、Akira Miyamoto、Yasushi Iyechika、Takayoshi Maeda (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University、2.Tsukuba Research Laboratory, Sumitomo Chemical Co. Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-4] The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy

Shigeo Yamaguchi、Michihiko Kariya、Shugo Nitta、Hiroshi Amano、Isamu Akasaki (1.Department of Electrical and Electronic Engineering, Meijo University、2.High-Tech Research Center, Meijo University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-5] Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy

Tokuharu KIMURA、Seikoh YOSHIDA、Jun WU、Hiroyuki YAGUCHI、Kentaro ONABE、Yasuhiro SHIRAKI (1.Department of Applied Physics, The University of Tokyo、2.Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.、3.Department of Electrical and Electronic Systems, Saitama University、4.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-6] Bandgap Energy and Effective Mass of BGaN

T. Honda、M. Shibata、M. Kurimoto、M. Tsubamoto、J. Yamamoto、H. Kawanishi (1.Department of Electronic Engineering, Kohgakuin University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-1] Application of Pressure Grown GaN Substrates to Epitaxy

S. Porowski (1.High Pressure Research Center Polish Academy of Sciences)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-2] Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method

Takayuki Inoue、Yoji Seki、Osamu Oda、Satoshi Kurai、Yoichi Yamada、Tsunemasa Taguchi (1.Central R&D Laboratory, Japan Energy Corporation、2.Faculty of Engineering, Yamaguchi University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード