[B-9-1] Direct Measurement of Transient Drain Current in PD-SOI MOSFETs Using Nuclear Microprobe for Highly Reliable Device Design

T. Iwamatsu, K. Nakayama, H. Takaoka, M. Takai, Y. Yamaguchi, S. Maegawa, M. Inuishi, A. Kinomura, Y. Horino, T. Nishimura (1.ULSI Laboratory, Mitsubishi Electric Corporation, 2.Research Center for Materials Science at Extreme Conditions, Osaka University, 3.ONRI, AIST)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Comparative Analysis of SOI Floating-Body and DTMOS with Bulk Devices for 1V Operation

O. Faynot, J. L. Pelloie, P. Flatresse, C. Raynaud, A. Grouillet, J. Du Port de Pontcharra, J. Cluzel V. Ferlet-Cavrois, A. Bracale (1.LETI (CEA/Grenoble), 2.CEA Centre d'Etudes de Bruyeres-Le-Chatel)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] New SOI-CBiCMOS with Merged Device Structure

Yue-Sheng ZHENG, Tanemasa ASANO (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon

J. Koga, C. Vanderstraeten, S. Takagi, A. Toriumi (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-10-1] Evaluation of SOI Wafer Quality and Technological Issues to be Solved

Makoto Yoshimi, Shigeto Maegawa, Toshiaki Tsuchiya, Mizuho Morita, Kiyoshi Demizu, Tadahiro Ohmi (1.SOI-Epi Committee, UCS (Ultra Clean Society), 2.Toshiba Corporation, 3.Mitsubishi Electric, 4.Shimane Univ., 5.Osaka Univ., 6.Shin'etsu Handotai, 7.Tohoku Univ.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-10-2] Water Jet Splitting of Thin Porous Si for ELTRAN

K. Ohmi, K. Sakaguchi, K. Yanagita, H. Kurisu, H. Suzuki, T. Yonehara (1.ELTRAN Project, Canon Inc.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-10-3] Creation of Bonded SOI Substrates with CZ Silicon Higher than 1000 Ωcm in Resistivity

Takao Abe, Shigeru Saito, Ken Aihara, Weifeng Qu, Yoshinori Hayamizu, Masanori Kimura, Kiyoshi Mitani (1.Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-10-4] Heavy Metal(Cu/Fe/Ni) Behavior in Ultra Thin Bonded SOI Wafers Evaluated by Using Radioactive Isotope Tracers

Jun-Ichiro Furihata, Masatake Nakano, Kiyoshi Mitani (1.Thin Film SOI Group. Process Engineering Dept. Isobe R&D Shin-Etsu Handotai Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-10-5] Measurement of As and B Profiles Implanted into SOI Substrates

Atsushi Ogura, Masayuki Hiroi (1.Silicon Systems Research Laboratories, NEC Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-11-1] Suppression of Substrate Crosstalk in Mixed Analog-Digital CMOS Circuits by Using High-Resistivity SIMOX Wafers

Junichi Kodate, Mitsuru Harada, Tsuneo Tsukahara (1.NTT Telecommunications Energy Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF Download

297 results (171 - 180)

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