[E-6-3] Noise Figure Characteristics of Wavelength Conversion Using FWM in an SOA Integrated DFB Laser

T. Simoyama, H. Kuwatsuka, B. E. Little, M. Matsuda, Y. Kotaki, H. Ishikawa (1.Fujitsu Laboratories Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[E-6-4] Recovery Dynamics Analysis of Saturable Absorber Optical Gates by Optical Sampling

Masayuki Shirane, Yoichi Hashimoto, Hirohito Yamada, Hiroyuki Yokoyama (1.Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[E-7-1] Monolithic Photonic ICs for Photonic Networks

Hiroshi Yasaka, Yuzo Yoshikuni (1.NTT Photonics Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF Download

[E-7-2] Micro-Aperture GaAs Surface Emitting Laser for Near Field Optical Data Storage

S. Shinada, F. Koyama, N. Nishiyama, M. Arai, K. Goto, K. Iga (1.Precision & Intelligence Laboratory, Tokyo Institute of Technology, 2.Tokai University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[E-7-3] Wafer-Bonded AlGaInP/Au/AuBe/SiO2/Si Light-Emitting Diodes

R. H. Horng, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, K. C. Lin (1.Institute of Electrical Engineering, Da-Yeh University, 2.Visual Photonics Epitaxy Company)

1999 International Conference on Solid State Devices and Materials |PDF Download

[E-7-4] High-Speed and High-Output Voltage Refracting-Facet Photodiode

Hideki Fukano, Yoshifumi Muramoto, Yutaka Matsuoka (1.NTT Photonics Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF Download

[E-7-5] Excess Noise Characteristics of a-Si:H Avalanche Photodiode Films Using Functionally Graded Structure

Kazuaki Sawada, Masahiro Akiyama, Hidekuni Takao, Makoto Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download

[LE-1-1] GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy

T. Kageyama, T. Miyamoto, S. Makino, N. Nishiyama, F. Koyama, K. Iga (1.Tokyo Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download

[LE-1-2] Low Threshold and High Characteristic Temperature 1.3 μm range GaInNAs Lasers Grown by MOCVD

Shunichi Sato (1.General Electronics Research and Development Center, Ricoh Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[A-8-1] Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process

Yasuhiro Mitsui, Fumiko Yano, Hiroshi Kakibayashi, Takashi Aoyama (1.Semiconductor & IC Div., Hitachi, Ltd., 2.Central Research Laboratory, Hitachi, Ltd., 3.Hitachi Research Laboratory, Hitachi, Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

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