[A-15-1] (Ba, Sr)TiO3 Stacked Capacitor Technology for 0.13μm-DRAMs and Beyond

Kazuhiro Eguchi, Katsuhiko Hieda, Junya Nakahira, Masahiro Kiyotoshi, Masaaki Nakabayashi, Soichi Yamazaki, Mitsuaki Izuha, Tomonori Aoyama, Kohji Tsunoda, Jun Lin, Kenro Nakamura, Syoko Niwa, Hiroshi Tomita, Akihiro Shimada, Yusuke Kohyama, Yutaka Ishibashi, Yoshiaki Fukuzumi, Tsunetoshi Arikado, Katsuya Okumura (1.Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation, 2.Technology Development Division, Semiconductor Group, Fujitsu Limited, 3.Fujitsu Laboratories Limited)

1999 International Conference on Solid State Devices and Materials |PDF Download

[A-15-2] Low Temperature Recovery of Ru/(Ba, Sr)TiO3/Ru Capacitors Degraded by Forming Gas Annealing

T. Iizuka, K. Arita, I. Yamamoto, S. Yamamichi, H. Yamaguchi, T. Matsuki, S. Sone, H. Yabuta, Y. Miyasaka, Y. Kato (1.ULSI Device Development Lab., NEC Corporation, 2.Functional Materials Research Labs., NEC Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[A-15-3] Enhanced Recovery from Back-End Process Damage by Conductive Perovskite Electrode for BST Capacitor

Y. Fukuzumi, K. Natori, M. Izuha, K. Eguchi, K. Hieda, Y. Ishibashi, Y. Kohyama, A. Nitayama (1.Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company)

1999 International Conference on Solid State Devices and Materials |PDF Download

[A-16-1] Etching Characteristics of (Ba, Sr)TiO3 Thin Films in an Inductively Coupled Plasma

Dong-Sing Wuu, Fang-Ching Liau, Nei-Hao Kuo, Ray-Hua Horng, Ming-Kwei Lee (1.Institute of Electrical Engineering, Da-Yeh University, 2.Institute of Electrical Engineering, Sun Yat-Sen University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[A-16-2] Ru-Ta2O5MIM Capacitor toward 0.1 μm DRAM Cell

Akihiko Tsuzumitani, Yasutoshi Okuno, Jun Shibata, Tadami Shimizu, Kazuhiko Yamamoto, Yoshihiro Mori (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[A-16-3] Fabrication of the Si/Al2O3/SiO2/Si Structure by Using the O2 Annealed Al2O3/Si Structure

Hirotsugu HORI, Fumitaka KONDO, Daisuke AKAI, Kazuaki Sawada, Makoto ISHIDA (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-12-1] Copper Metallization for High-Speed ECL-CMOS LSI's

N. Ohashi, T. Saito, T. Hashimoto, J. Noguchi, T. Imai, K. Sasajima, H. Yamaguchi, N. Owada (1.Device Development Center, Hitachi, Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-12-2] A Reliable Interconnection Technology Using Organic Low-K Dielectrics for 0.18 μm CMOS Circuit

Kazuhiko Tokunaga, Koichi Ikeda, Takaaki Miyamoto, Toshiaki Hasegawa, Masanaga Fukasawa, Hideyuki Kito, Shingo Kadomura (1.Process Development Dept.2, LSI Business & Technology Development Group, C.N.C., Sony Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-12-3] PE-CVD of Thermally Stable Low-k IMD Films Using Low-GWPC5F8

Tatsuru Shirafuji, Yasuaki Hayashi, Shigehiro Nishiono (1.Department of Electronics and Information Science, Kyoto Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-13-1] A Novel and Low Thermal Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured HSQ (Hydrogen Silsesquioxane) in STC (Stacked Capacitor) DRAM

Hae-Jeong Lee, Seong-Ho Kim, Juseon Goo, Byeong Jun Kim, Ho-Kyu Kang, Sang-In Lee, Moon Yong Lee (1.Semiconductor R&D Center, Samsung Electronics Co., LTD.)

1999 International Conference on Solid State Devices and Materials |PDF Download