[A-2-2] Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs

Nobuyuki Sano, Kenji Natori, Kazuya Matsuzawa, Mikio Mukai (1.Institute of Applied Physics, University of Tsukuba, 2.Semiconductor Technology Academic Research Center (STARC))

1999 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Excess Noise in Sub-Micron Silicon FET:Transport Theory and Device Optimization

Luiz M. Franca-Neto, James S. Harris (1.Center for Integrated Systems, Stanford University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Simulation of Temperature Dependence of Microwave Noise in MOS Transistors

Michael Obrecht, Tajinder Manku (1.RF Technology Group, Electrical and Computer Engineering Department, University of Waterloo)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Device Design Considerations for Sub-50 nm CMOS

Tsu-Jae King (1.Department of Electrical Engineering and Computer Sciences University of California)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED

Jong-Wan Jung, Jong-Min Kim, Jeong-Hwan Son, Shin-Young Chung, Young-Jong Lee, Hyun-Cheol Kim, Kyung-Ho Lee (1.LG Semicon Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Anomalous Hot Carrier Degradation of nMOSFETs with an Ultra-Shallow Source/Drain Extension

Kaori Nakamura, Eiichi Murakami, Shin'ichiro Kimura (1.ULSI Research Department, Central Research Laboratory, Hitachi Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] The Impact of Nitrogen Implantation at LDD(NIL) on Deep Sub-Micron CMOS Devices

Sung-Kwon Hong, Sang-Gi Lee, Jae-Gyung Ahn, Dae-Gwan Kang, Jeong-Mo Hwang (1.LG Semicon Co., Ltd, R&D Division)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] Oxide Mediated Solid Phase Epitaxy (OMSPE) of Silicon: A New Low Temperature Epitaxy Technique Using Intentionally Grown Native Oxide

I. Mizushima, Y. Mitani, K. Miyano, S. Kambayashi (1.Microelectronics Engineering Laboratory, R&D Center, Toshiba Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] High Performance Buried Channel-pFETs Using Elevated Source/Drain Structure with Self-Aligned Epitaxial Silicon Sliver (SESS)

J. H. Lee, S. C. Lee, N. Y. Kwak, I. S. Yeo, C. Y. Yeom, S. Ritterbush, S. K. Lee, C. T. Kim (1.Semiconductor Advanced Research Div., HYUNDAI Electronics Industries Co., 2.Applied Materials Korea, 3.Applied Materials)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-2-3] Study of an Elevated Drain Fabrication Method for Ultra Shallow Junction

M. Nakano, H. Kotaki, K. Sugimoto, T. Okumine, F. Yoshioka, S. Kakimoto, K. Ohta, N. Hashizume (1.Advanced Technology Research Laboratories, Sharp Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

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