[C-4-3] Piezoelectric Polarization Effects in GaInN/GaN Heterostructures and Some Consequences for Device Design

Christian Wetzel, Hiroshi Amano, Isamu Akasaki (1.High Tech Research Center, Meijo University, 2.Department of Electrical and Electronic Engineering, Meijo University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-4-4] Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi (1.NTT Basic Research Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-5-1] MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors

S. P. DenBaars, H. Marchand, M. Hansen, A. Abare, R. Vetury, G. Parish, P. Fini, T. Katona, M. Craven, J. Ibbetson, P. Kozodoy, S. Keller, J. S. Speck, U. K. Mishra (1.Materials Department University of California)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] High-Gain Multi-Finger AlGaN/GaN HJFETs with 0.3-μm Gate-Length for K- and Ka-Band Applications

K. Kunihiro, K. Kasahara, Y. Takahashi, Y. Ohno (1.Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] AlxGa1-xN/GaN Material Properties and HEMT Shunt Switch RF Performance

Nikolai Drozdovski, Robert Caverly (1.Electrical and Computer Engineering Department, Villanova University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-5-4] High Voltage GaN HEMTs

N.-Q. Zhang, J. P. Ibbetson, S. Keller, R. Vetury, S. DenBaars, U. K. Mishra (1.Electrical and Computer Engineering & Materials Department, University of California)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-5-5] The Potential of III-Nitrides for Use in High-Speed Field-Effect Transistors

Frank Schwierz, Gerhard Gobsch (1.Technische Universitat Ilmenau, Institut Festkorperelektronik, 2.Technische Universitat Ilmenau, Institut fur Physik)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] Theoretical Analysis on Nitride-Based Laser Performance

W. W. Chow (1.Sandia National Laboratories)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-6-2] High Quality Nonalloyed Pt Ohmic Contacts to P-Type GaN Using Various Surface Treatment

Ja-Soon Jang, Han-Ki Kim, Seong-Ju Park, Tae-Yeon Seong (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-6-3] Low Resistance and Thermally Stable Pt/W/Au Ohmic Contacts to P-Type GaN

Hwa-Sub Oh, Ja-Soon Jang, Han-Ki Kim, Seong-Ju Park, Tae-Yeon Seong (1.Department of Materials Science and Engineering Kwangju Institute of Science and Technology (K-JIST))

1999 International Conference on Solid State Devices and Materials |PDF Download

297 results (101 - 110)

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