[B-7-1] Intergrity of Gate Oxides Irradiated Under Electron-Beam Lithography Conditions

Pei Fen Chong, Byung Jin Cho, Eng Fong Chor, Moon Sig Joo, In Seok Yeo (1.Department of Electrical Engineering, National University of Singapore, 2.Hyundai Electronics Industries Company Limited, Semiconductor Advanced Research Division)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] Simple Fabrication of Nanopyramid Array (NPA) on Si Surface by Means of Focused Ion Beam Patterning and Wet Etching

M. Koh, T. Shinada, S. Sawara, T. Goto, Y. Ando, I. Ohdomari (1.Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2.School of Science and Engineering, Waseda University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] Low Pressure High Speed Spin Dryer for Realizing Water Mark Free Surface

Hisashi Okuchi, Hiroshi Tomita, Soichi Nadahara, Katsuya Okumura, Kazuaki Maeda, Haruko Ohno, Manabu Tsujimura, Yusuke muraoka (1.Process Engineering Lab., Toshiba Corp. Semiconductor Company, 2.Precision Machinery Group, Ebara Corp., 3.Dainippon Screen MFG. Co. Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[B-7-4] Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO2 Interfaces

Hikaru Kobayashi, Emi Kanazaki, Akira Asano, Kenji Yoneda, Yoshihiro Todokoro, Mikihiko Nishitani (1.Institute of Scientific and Industrial Research, Osaka University, 2.ULSI Process Technology Development Center, Matsushita Electronics Corporation, 3.Corporate Planning Department, Matsushita Electronics Corporation, 4.Display Device Development Center, Matsushita Electrics Industrial Co. Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Polarization Effects in III-N Semiconductor Devices

Vincenzo Fiorentini, Fabio Bernardini (1.Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica, Universita degli Studi di Cagliari, 2.Walter Schottky-Institut, Technische Universitat Munchen)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Spatially Resolved Imaging of the Spectral Emission Characteristic of InGaN-MQW-LEDs by Scanning Electroluminescence Microscopy

Peter Fischer, Jurgen Christen, Margit Zacharias Veit Schwegler, Christoph Kirchner, Markus Kamp (1.Institute of Experimental Physics, Otto-von-Guericke University, 2.Department of Optoelectronics, University of Ulm)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Recombination Dynamics of Self-Trapped Excitons in the High-Efficient Blue LEDs under Reverse Bias Condition

Tsunemasa Taguchi, Hiromitsu Kudo, Hiroki Ishibashi, Ruisheng Zheng, Yoichi Yamada (1.Faculty of Engineering, Yamaguchi University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Yellow Luminescence in Gallium Nitride Induced by Intentional Impurity Incorporation During Halide Vapor Phase Epitaxy

R. Zhang, L. Zhang, T. F. Kuech, S. L. Gu, B. Shen, Y. Shi, Y. D. Zheng (1.Department of Physics, Nanjing University, 2.Department of Chemical Engineering, University of Wisconsin)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells

Shigefusa Chichibu, Takahiro Deguchi, Akiko Setoguchi, Mutsumi Sugiyama, Hisayuki Nakanishi, Takayuki Sota, Takashi Mukai, Shuji Nakamura (1.Institute of Applied Physics, University of Tsukuba, 2.Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3.Department of Electrical Engineering, Science University of Tokyo, 4.Department of Research and Development, Nichia Chemical Industries Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-4-2] Photoluminescence Intensity Enhancement due to Screening of Piezoelectric Field in Si-Doped G227aN/AlGaN Single-Quantum-Wells

Atsuhiro Kinoshita, Hideki Hirayama, Philippe Riblet, Akira Hirata, Yoshinobu Aoyagi (1.The institute of Physical and Chemical Research (RIKEN), 2.Department of Chemical Engineering, Waseda University)

1999 International Conference on Solid State Devices and Materials |PDF Download