[A-4-2] A New Lateral Dual-Gate Thyristor with Current Saturation

You-Sang Lee、Dae-Seok Byeon、Doo-Young Kim、Yearn-Ik Choi、Min-Koo Han (1.School of Electrical Eng., Seoul National Univ.、2.School of Electronics Eng. Ajou Univ.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-3] Uni-Directional HV MOS Device Modeling for Circuit Simulation

T. Myono、E. Nishibe、S. Kikuchi、K. Iwatsu (1.MOS-LSI Division, SANYO Electric Co. Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-1] A New Fabrication Process for Low-Loss Millimeter-Wave Transmission Lines on Silicon

H. Ishii、N. Sahri、T. Nagatsuma、K. Machida、K. Saito、S. Yagi、M. Yano、K. Kudo、H. Kyuragi (1.NTT Telecommunications Energy Laboratories、2.NTT Advanced Technology Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-2] Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping

Yukihiro Kiyota、Katsuyoshi Washio、Toshiyuki Kikuchi、Taroh Inada (1.Central Research Laboratory, Hitachi、2.Device Development Center, Hitachi、3.College of Engineering, Hosei university)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-3] Design of SiGe HBTs for High Frequency Operation

Frank Schwierz、Jorg Gessner、Dagmar Schipanski (1.Technische Universitat Ilmenau, Institut Festkorperelektronik)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-4] Memory Function of a SiO2/β-SiC/Si MIS Diode

Kazuyoshi Takada、Masami Fukumoto、Yoshiyuki Suda (1.Faculty of Technology, Tokyo University of Agriculture and Technology)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-1] New Guidelines of Optimizing SALICIDE Structure for High Speed CMOS LSI

K. Miyashita、K. Ohuchi、H. Yoshimura、T. Iinuma、K. Suguro、Y. Toyoshima (1.Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-2] Source/Drain Extension-to-Gate Overlap Scaling in Deep Sub-Micron MOSFETs

A. Inani、H. Deshpande、S. Krishnan、M.-R. Lin、Jason C. S. Woo (1.Department of Electrical Engineering, University of California、2.Technology Development Group, Advanced Micro Devices)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-3] New Stand-By Degradation Mode in n-MOSFET's with Thin Gate Oxide

Hiroyuki Tanaka、Hirofumi Shinohara、Hidetsugu Uchida、Jiro Ida (1.Device Business Group, Oki Electric Industry Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-4] Two-Dimensional Quantum Monte Carlo Device Simulation of Ultrasmall MOSFETs

Hideaki Tsuchiya、Tanroku Miyoshi (1.Department of Electrical and Electronics Engineering, Kobe University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

297件中(61 - 70)

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