[B-11-2] Thorough Investigation of Kink-Related Excess Noise in Deep Submicron SOI N-MOSFETs on Unibond Substrate

S. Haendler、J. Jomaah、F. Balestra、J. L. Pelloie、C. Raynaud、J. Boussey (1.LPCS/ENSERG (UMR CNRS/INPG)、2.LETI-CEA (DMEL/CENG))

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-11-3] AC Floating Body Effects and 1/f Noise Characteristics of Dual Body SOI Structure for Analog-Digital Mixed Mode Circuit

Hyeokjae Lee、Jong-Ho Lee、Young-June Park、Hong Shick Min (1.School of Electrical Engineering and ISRC Seoul National University、2.School of Electrical Engineering, Wonkwang University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-11-4] Inherent Suppression of Low-Frequency Noise Overshoot in Sub-Micron Partially-Depleted Floating Body Silicon-On-Sapphire (SOS) MOSFETs

Ying-Che Tseng、P. Dennies、M. Stuber、J. Cable、Jason C. S. Woo (1.Department of Electrical Engineering, University of California、2.Peregrine Semiconductor Corp.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-11-5] Comparison Between High-Dose and Low-Dose SIMOX MOSFET's for Low-Power Radio-Frequency Applications

O. Rozeau、J. Jomaah、J. Boussey、Y. Omura (1.LPCS- LEMO、2.ST Microelectronics、3.Kansai University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LB-1-1] High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors

Hiroshi Yano、Taichi Hirao、Tsunenobu Kimoto、Hiroyuki Matsunami (1.Department of Electronic Science and Engineering, Kyoto University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LB-1-2] New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dielectrics for Advanced Logic and DRAM Application

Jon-Wan Jung、Sung-Kye Park、Gyu-Han Yoon、Dae-Gwan Kang、Young Jong Lee (1.Hyundal Micro Electronics Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LB-1-3] A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation

Keiichi Haraguchi、Kazuyoshi Torii、Jiro Yugami、Takahiro Onai (1.Central Research Laboratory, Hitachi, Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LB-1-4] Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma

Michihiko Yanagisawa、Shinya Iida、Hiroki Ogawa、Yasuhiro Horiike (1.Speedfam-IPEC Co., Ltd.、2.Development of Material Science, School of Engineering, University of Tokyo)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-1] Low Voltage FeRAMs: Challenges and Solutions for Future Product Applications

C. Dehm、W. Hartner、G. Schindler、V. Weinrich、C. Mazure (1.Infineon technologies AG, Memory Products、2.Otto.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-2] Low-Temperature Processing Using Triple Alkoxides Precursors for Non-volatile Ferroelectric Memories

Kazumi Kato (1.National Industrial Research Institute of Nagoya、2.Frontier Collaborative Research Center, Tokyo Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

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