[A-6-5] Analysis of Distortion Behavior Considering Polydepletion Effect in MOS Transistors

Kwang-Hoon Oh、Zhiping Yu、Robert W. Dutton (1.Center for Integrated Systems, Stanford University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-1] High-quality Epitaxial Growth of SiC and State-of-the-art Device Development

Hiroyuki Matsunami、Tsunenobu Kimoto (1.Department of Electronic Science and Engineering, Kyoto University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-2] A Novel Diffusion Resistant P-Base Region Implantation for Accumulation-Mode 4H-SiC Epi-Channel Field Effect Transistor

Rajesh Kumar、Jun Kozima、Tsuyoshi Yamamoto (1.Research Laboratories, DENSO CORPORATION)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-3] New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure

Jae-Hong Jeon、Min-Cheol Lee、Kee-Chan Park、Min-Koo Han (1.School of Electrical Engineering, Seoul National University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-1] High K Dielectrics for CMOS and Flash

L. Manchanda (1.Bell Laboratories, Lucent Technologies)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-2] High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma

Yuji Saito、Katsuyuki Sekine、Masaki Hiramaya、Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-3] Impact of Nitrogen Profile in Gate Oxynitride on CMOS Characteristics

Yasuyuki Tamura、Mayumi Shigeno、Satoshi Okubo、Kiyoshi Irino、Toshiro Nakanishi、Kanetake Takasaki (1.ULSI Technology Labs., Fujitsu Laboratories Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-4] Control of Ion Bombardment and Species for Ultra Low Temperature Formation of Silicon Nitride Gate Dielectric Films Using Plasma Chemical Vapor Deposition

Hiroyuki Ohta、Atsushi Nagashima、Masafumi Ito、Masaru Hori、Toshio Goto (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-1] Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy

Hiroshi Itokawa、Tetsuhiro Maruyama、Seiichi Miyazaki、Masataka Hirose (1.Department of Electrical Engineering, Hiroshima University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-2] Sub 1.3nm Amorphous Ta2O5 Gate Dielectrics for Damascene Metal Gate Transistor

Seiji Inumiya、Atsushi Yagishita、Tomohiro Saito、Masaki Hotta、Yoshio Ozawa、Kyoichi Suguro、Yoshitaka Tsunashima、Tsunetoshi Arikado (1.Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

297件中(71 - 80)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
次へ »

▲