[D-10-3] Observation of the Infrared Emission from Simply Periodical GaAs/AlAs Superlattices

Chiaki Domoto、Naoki Ohtani、Pablo O. Vaccaro、Kazuyoshi Kuroyanagi、Takehiro Nishimura (1.ATR Adaptive Communications Research Laboratories、2.R&D Center, Keihanna, Thin Film Device Grope, Kyocera Co.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-11-1] Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF2 Epilayers on Si(111) with Rapid Thermal Anneal

Takeo Maruyama、Naoto Nakamura、Masahiro Watanabe (1.Department of Information Processing, Tokyo Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-11-2] Efficient Electroluminescence from Porous Silicon

Bernard Gelloz、Nobuyoshi Koshida (1.Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-11-3] Light Emitting Properties of Silicon Nanocrystallite Layer Synthesized by Pulsed Laser Ablation in Inert Background Gas

Takehito Yoshida、Yuka Yamada、Nobuyasu Suzuki、Toshiharu Makino、Seinosuke Onari (1.Opto-Electro Mechanics Research Laboratory, Matsushita Research Institute Tokyo, Inc.、2.Institute of Material Science, University of Tsukuba)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-12-1] InGaP Channel FET with High Breakdown Voltage

Naoki Hara、Yasuhiro Nakasha、Toshihide Kikkawa、Kazukiyo Joshin、Yuu Watanabe Hitoshi Tanaka、Masahiko Takikawa (1.Fujitsu Laboratories Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-12-2] Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique

Satoshi Kodama、Tomofumi Furuta、Noriyuki Watanabe、Hiroshi Ito、Atsushi Kanda、Masahiro Muraguchi、Tadao Ishibashi (1.NTT Photonics Labs.、2.NTT Netwerk Innovation Labs.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-12-3] Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well

Masatsugu Yamada、Hiroshi Takahashi、Tamotsu Hashizume、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-12-4] A Role of Ultra Thin Silicon Interlayer in Au/Si/n-GaAs Contacts: Depinning of the GaAs Surface

Jan Ivanco、Jorge Almeida、Hikaru Kobayashi、Giorgio Margaritondo (1.Institute of Scientific and Industrial Research, Osaka University、2.Institute of Applied Physics, Ecole Polytechnique Federale de Lausanne)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-1] Low-Voltage CMOS Circuit Technology as a Standard in the 21st Century

Shin'ichiro Mutoh (1.Research Planning Department, NTT Science and Core Technology Laboratory Group)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-2] Novel Low-Power Switched Current Matched Filter for DS-CDMA Wireless Communication

Kenji Togura、Koji Kubota、Kazuya Masu、Kazuo Tsubouchi (1.Research Institute of Electrical Communication, Tohoku University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード