[A-11-1] Effects of Hydrogen and Deuterium Annealing on Plasma Process-Induced Damages

C. G. Ahn、J. H. Kim、Y. K. Kim、Y. H. Lee、B. K. Kang (1.Pohang University of Science and Technology, Department of Electrical Engineering、2.SAMSUNG Electronics Co. Ltd., Semiconductor Business, ASIC Division)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-11-2] Influence of Gate Oxide Quality on Plasma Process-Induced Damage in Ultra Thin Gate Oxide

Mototsugu Okushima、Ko Noguchi (1.ULSI Device Development Laboratory, NEC Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-11-3] Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy

Masashi Agata、Hideo Wada、Osamu Maida、Koji Eriguchi、Akira Fujimoto、Takeshi Kanashima、Masanori Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University、2.ULSI Process Tech. Dev. Ctr., Matsushita Electronics、3.Dept. Electrical Engineering, Wakayama National College of Technology)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-12-1] MOS Characteristics of NH3-Nitrided N2O-Annealed Oxides Fabricated at Reduced Pressure

Giwan Yoon、Yefim Epstein (1.Digital Semiconductor, Hudson、2.School of Engineering, Information & Communications University (ICU)、3.Intel Massachusetts)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-12-2] Novel Ultra Thin Heavily Nitrided Gate Dielectrics Technology Adding Fluorine for Highly Reliable MOSFETs

N. Morosawa、H. Kotaki、S. Kakimoto、K. Ohta、N. Hashizume (1.Advanced Technology Research Laboratories, Sharp Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-12-3] Latent Damage Generation in Submicrometer MOS Devices Under High-Field Impulse Stressing and Its Characterization Using Flicker Noise Measurement

W. K. Chim、P. S. Lim、B. P. Yeo、D. S. H. Chan、G. L. Teh (1.Centre for Integrated Circuit Failure Analysis and Reliability, Faculty of Engineering National University of Singapore)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-12-4] An Efficient Process-Evaluation Method for Ultra-Thin Gate Oxides

Chuan H. Liu、Tun-Jen Cheng、K. Y. Fu (1.United Microelectronics Corp.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-1] Circuit Design Technology for High Speed SOI-MPU

C. Akrout (1.IBM)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-2] Clarification of Floating-Body Effects on Current Drivability in Deep Sub-Quarter Micron Partially-Depleted SOI MOSFET's

T. Matsumoto、S. Maeda、Y. Hirano、K. Eikyu、Y. Yamaguchi、S. Maegawa、M. Inuishi、T. Nishimura (1.ULSI Development Center, Mitsubishi Electric Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-3] Simulation on the Threshold Voltage Adjustment of Striped-Gate Nondoped-Channel Fully Depleted SOI-MOSFET

R. Koh (1.Silicon Systems Research Laboratories, NEC Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード