Si(100) Interface

Tomohiro Nakamura、Kyoko Nishizaki、Keisuke Takahashi、Hiroshi Nohira、Takeo Hattori (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-3] High-Resolution Photoelectron Spectroscopy of Interfacial Nitrogen in Ultrathin Si Oxynitride Films

M. Oshima、J. H. Oh、K. Ono、H. Kiwata、K. Nakamura、M. Niwa、K. Usuda、N. Hirashita、H. W. Yeom、Y. D. Chung、H. J. Shin (1.Department of Applied Chemistry, The University of Tokyo、2.Semiconductor Technology Academic Research Center、3.ASSRC, Yonsei University、4.Pohang Accelerator Laboratory, Pohang University of Science and Technology)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-4] Electrical Characterization of Atomic-Scale Defects in an Ultrathin Si Oxynitride Layer

Noriyuki Miyata、Masakazu Ichikawa (1.Joint Research Center for Atom Technology, National Institute of Advanced Industrial Science and Technology (JRCAT-AIST)、2.Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c/o National Institute of Advanced Industrial Science and Technology)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-5] Monolayer Nitridation of Si(001) Surfaces

Yukinori Morita、Takao Ishida、Hiroshi Tokumoto (1.Joint Research Center for Atom Technology (JRCAT)、2.National Institute of Advanced Industrial Science and Technology (AIST))

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-6] Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen

Hiroya Ikeda、Daisuke Matsushita、Shinya Naito、Kenji Ohmori Akira Sakai、Shigeaki Zaima、Yukio Yasuda (1.Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University、2.Center for Cooperative Research in Advanced Science and Technology, Nagoya University)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LB-2-1] GIDL Currents in MOSFETs with High-k Dielectric

Sung-il Chang、Jongho Lee、Hyungcheol Shin (1.KAIST, Department of Electrical Engineering and Computer Science、2.Wonkwang University, School of Electrical Engineering)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LB-2-2] Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation

K. Shibahara、Y. Ishikawa、D. Onimatu、N. Maeda、A. Mineji、K. Kagawa、A. Matuno、T. Nire (1.Research Center for Nanodevices and Systems, Hiroshima University、2.NEC ULSI Device Development Division、3.Research Center, Research Division, Komatsu Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-1] Future SOI Technology and Devices

Jean-Pierre Colinge、Jong-Tae Park (1.Department of Electrical and Computer Engineering, One Shields Avenue, University of California、2.Department of Electronics Engineering, University of Inchon)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-2] Novel SOI Fabrication Process by Light Ion Implantation and Annealing in Oxygen Including Atmosphere

Atsushi Ogura (1.Silicon Systems Res. Labs, NEC Corp.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-3] Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures

Tomohisa Mizuno、Naoharu Sugiyama、Tsutomu Tezuka、Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード