[A-2-2] Spin-Drying with CO2 Gas Purge for 0.13 μm DRAM's Contact Process

Yoshihiro Ogawa、Hisashi Okuchi、Hiroshi Tomita、Kunihiro Miyazaki、Kazuhiko Takase、Soichi Nadahara (1.Process and Manufacturing Engineering center., Toshiba Corp. Semiconductor company)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-3] The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation--a Controlled Laminar Air Flow Experiment

Takeshi Ohkawa、Yoshihide Wakayama、Sadao Kobayashi、Shigetoshi Sugawa、Herzl Aharoni、Tadahiro Ohmi (1.Department of Electronic Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University、3.Taisei Corporation、4.Department of Electrical and Computer Engineering Ben-Gurion University of the Negev Beer-Sheva)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-4] Impact of Gate Etch Damage and Profile in High Density DRAM Cell

Il-Gweon Kim、Jung-wan Bae、Jun-Ho Choy、Nam-Sung Kim、Young-Woo Kweon、Se-Kyoung Choi、Sung-Chul Kim、Joo-Seog Park、Ji-Byum Kim (1.TG4-P9, Memory R&D Division, Hynix Semiconductor Inc.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-5] Effect of Poly Metal Gate Etch Post-Cleaning on the Tail Distribution of DRAM Data Retention Time

Nam-Sung Kim、Il-Gweon Kim、Jun-Ho Choy、Se-Kyeong Choi、Jo-Bong Choi、Young-Woo Kweon、Sung-Cheul Kim、Ju-Seok Park、Ji-Bum Kim (1.Technology Group 4, Memory R&D Division, Hynix Semiconductor Co., Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-6] A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing an Interconnect System Suitable to 0.10-μm DRAMs and Beyond

Isamu Asano、Yoshitaka Nakamura、Hideo Aoki、Naoki Fukuda、Satoru Yamada、Toshihiro Sekiguchi (1.ELPIDA MEMORY, Inc.、2.Device Development Center, Hitachi Ltd.、3.Semiconductor Group, Hitachi Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-7] 240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry

Naoyuki Kofuji、Takashi Tsutsumi、Eiji Matsumoto、Kotaro Fujimoto、Naoshi Itabashi、Masaru Izawa、Takashi Fujii、Shin'ichi Tachi (1.Central Research Laboratory, Hitachi, Ltd.、2.Kasado Semiconductor Equipment Product Division, Hitachi, Ltd.、3.Hitachi Techno Eng. Co., Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-8] Filling of Tungsten into Deep Trench Using Time-Modulation CVD Method

Y. Igarashi、T. Morooka、Y. Yamada、T. Nakamura、K. W. Lee、K. T. Park、H. Kurino、M. Koyanagi (1.Dept. of Machine Intelligence and Systems Engineering, Tohoku Univ.、2.JST(Japan Science and Technology Corporation))

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-1] Issues of Current LSI Technology and an Expectation for New System-Level Integration

Takayasu Sakurai (1.Center for Collaborative Research, and Institute of Industrial Science, University of Tokyo)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] Three-Dimensional Integration of Fully Depleted SOI Devices

T. Morooka、T. Nakamura、Y. Yamada、Y. Igarashi、K. W. Lee、K. T. Park、H. Kurino、M. Koyanagi (1.Dept. of Machine Intelligence and Systems Engineering, Tohoku University、2.JST(Japan Science and Technology Corporation))

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-3] Electroplating Cu Filling Study for Thorough Electrode in Silicon Wafer of Three Dimensional LSI Chip Stacking

M. Tomisaka、H. Yonemura、M. Hoshino、K. Takahashi (1.Electronic System Integration Technology Research Department, Association of Super-Advanced Electronic Technologies (ASET))

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード