[B-4-1] Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage

Da-Yuan Lee、Horng-Chih. Lin、Meng-Feng Wang、Min-Yu Tsai、Tiao-Yuan Huang、Tahui Wang (1.Institute of Electronics, National Chiao Tung University、2.National Nano Device Laboratories)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-2] Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs

Chuan H. Liu、Ming T. Lee、Chih-Yung Lin、Jenkon Chen、Klaus Schruefer、Thomas Schiml、Anastasios A. Katsetos、Zhijian Yang、Nivo Rovedo、Terence B. Hook、Clement Wann (1.United Microelectronics Corp.、2.Infineon Technologies Corp.、3.IBM Microelectronics Division)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-3] Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide

Da-Yuan Lee、Horng-Chih Lin、Min-Yu Tsai、Tiao-Yuan Huang、T. Wang (1.Institute of Electronics, National Chiao Tung University、2.National Nano Device Laboratories)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-4] Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown in Ultrathin Gate Oxides

W. Mizubayashi、Y. Yoshida、S. Miyazaki、M. Hirose (1.Department of Electrical Engineering, Hiroshima University、2.National Institute of Advanced Industrial Science and Technology (AIST), Advanced Semiconductor Research Center)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-5] Current-Voltage Charactreistics of Gate Oxides after Hard Breakdown

Twan Bearda、Pierre H. Woerlee、Hans Wallinga、Paul W. Mertens、Marc M. Heyns (1.Interuniversitary Micro-Electronics Center、2.University of Twente)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-1] Magnetic Tunnel Junctions and Architectures for their Use in Magnetic RAMs

W. J. Gallagher、D. W. Abraham、S. L. Brown、A. Gupta、J. Hummel、R. H. Koch、Yu Lu、E. J. O'Sullivan、W. Reohr、R. Robbertazzi、P. L. Trouilloud、P. M. Rice、K. P. Roche、M. G. Samant、R. E. Scheuerlein、S. S. P. Parkin、H. Hoenigschmid、G. Lee、J. Nuetzel、G. Mueller (1.IBM T. J. Watson Research Center、2.IBM Research Division, Almaden Research Center、3.Infineon Technologies)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-2] Intrinsic Junction Leakage by Co In-Diffusion during CoSi2 Formation Characterized with Damage Free n+/p Silicon Diodes

Masakatsu Tsuchiaki、Kazuya Ohuchi (1.Corporate Research & Development Center, Toshiba Corporation、2.System LSI Research & Development Center, Toshiba Semiconductor Company)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-3] Characterization of the Co-Silicide Penetration Depth into the Junction Area

Hi-Deok Lee、Keun-Koo Kang、Myoung-Jun Jang、Joo-Hyoung Lee、Seong-Hyun Park、Key-Min Lee、Ki-Seok Yoon、Jung-Hoon Choi、Geun-Suk Park、Young-Jin Park (1.Dept. of Electronics Engineering, Chungnam National University、2.Dept. of Physics, Chungbuk National University、3.Memory R&D Division, Hynix Semiconductor Co.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4] Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts

Yoshinori Tsuchiya、Akihiro Tobioka、Osamu Nakatsuka、Hiroya Ikeda、Akira Sakai、Shigeaki Zaima、Yukio Yasuda (1.Graduate School of Engineering, Nagoya University、2.Center of Cooperative Research in Advanced Science and Technology, Nagoya University)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl

Masashi Uematsu、Hiroyuki Kageshima、Kenji Shiraishi (1.NTT Basic Research Laboratories、2.Institute of Physics, Tsukuba University)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード