The Japan Society of Applied Physics

463件中(231 - 240)

[F-2-1] MOVPE Growth of Wurtzite InN and its Characteristics

Takashi Matsuoka、Hiroshi Okamoto、Masashi Nakao、Hiroshi Harima、Hiroko Takahata、Hisatsugu Mitate、Seiichirou Mizuno、Yasuhiro Uchiyama、Toshiki Makimoto (1.NTT Basic Research Laboratories、2.NTT Photonics Laboratories、3.Kyoto Institute of Technology, Dept. of Electronics and Information Science、4.NTT Advanced Technology、5.Meiji University, Dept. of Electrical and Electronic Engineering)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-3] Improvement of DC and RF characteristics of AlGaN/GaN HEMTs by thermally annealed Ni/Pt/Au Schottky gate

Takuma Nanjo、Naruhisa Miura、Toshiyuki Oishi、Muneyoshi Suita、Yuji Abe、Tatsuo Ozeki、Shigenori Nakatsuka、Akira Inoue、Takahide Ishikawa、Yoshio Matsuda、Hiroyasu Ishikawa、Takashi Egawa (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation、2.Microwave Device Development Dept., Mitsubishi Electric Corporation、3.Research Center for Nano-Device and System, Nagoya Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

463件中(231 - 240)