[E-5-2] Single Electron Transport through Single InAs Quantum Dots Probed by Nanogap Electrodes

Minkyung Jung, Kazuhiko Hirakawa (1.Institute of Industrial Science, University of Tokyo, 2.CREST)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-5-3] Investigation of Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings

Yiming Li, Hsiao-Mei Lu (1.Department of Nano Device Technology, National Nano Device Laboratories, 2.Microelectronics and Information Systems Research Center, National Chiao Tung University, 3.Department of Bioengineering, University of Illinois at Chicago)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-5-4] 1-bit BDD full adder circuit using single electron transistors by selective area metalorganic vapor phase epitaxy

Y. Miyoshi, F. Nakajima, J. Motohisa, T. Fukui (1.Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-6-1] Multi-Level Nanoimprint Lithography For Sub-10 nm, High-Throughput, Low-Cost Patterning

Stephen Y. Chou (1.Department of Electrical Engineering Princeton University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-6-2] Photon-induced effect on single-charge-tunneling in a Si multidot Schottky FET

Ratno Nuryadi, Hiroya Ikeda, Yasuhiko Ishikawa, Michiharu Tabe (1.Research Institute of Electronics, Shizuoka University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-6-3] Room-Temperature Observation of Negative Differential Conductance Due to Large Quantum Level Spacing in Silicon Single-Electron Transistor

Masumi Saitoh, Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-6-4] Analytical SPICE Modeling of Realistic MOS-based Single-Electron Transistors -“MOSETs” with a Unique Distribution Function in the Coulomb Oscillation Region

Kyung Rok Kim, Ki-Whan Song, Gwanghyeon Baek, Hyun Ho Kim, Jung Im Huh, Jong Duk Lee, Byung Gook Park (1.Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul Nat’l Univ.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-6-5] Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin SOI MOSFET and Its Application to Si Single-Electron Transistor

Seiji Horiguchi, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi (1.NTT Basic Research Laboratories, NTT Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-7-1] Solid-electrolyte nanometer switch

Toshitsugu Sakamoto, Hiroshi Sunamura, Hisao Kawaura, Tsuyoshi Hasegawa, Tomonobu Nakayama, Masakazu Aono (1.Fundamental Research Labs., NEC Corp., 2.SORST, Japan Science & Technology Corporation (JST), 3.Nanomaterials Laboratory, NIMS)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-7-2] Piezoresistive Nanomechanical Cantilever based on InAs/AlGaSb Heterostructure

Lionel F. Houlet, Hiroshi Yamaguchi, Sen Miyashita, Yoshiro Hirayama (1.NTT Basic Research Laboratories., 2.NTT-AT., 3.CREST-JST.)

2003 International Conference on Solid State Devices and Materials |PDF Download

463 results (201 - 210)

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