[P9-10L] A surface-potential-based cylindrical surrounding-gate MOSFET model

Shuhei Amakawa, Kazuo Nakazato, Hiroshi Mizuta (1.Microelectronics Research Centre, Cavendish Laboratory, 2.Hitachi Cambridge Laboratory, Cavendish Laboratory)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P10-1] Improvement of Data Retention in Floating Gate Flash EEPROM’s with P-Doped Floating Gate

B. C. Wu, H. W. Tsai, S. S. Chung, C. J. Lin, D. S. Kuo, M. S. Liang (1.Department of Electronic Engineering, National Chiao Tung University, 2.Tsmc, Science-based Industrial Park, 3.Nexflash Inc)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P10-2] New Three Dimensional High Density S-SGT Flash Memory Architecture using Self-Aligned Interconnection Fabricating Technology without Photo Lithography Process for Tera Bits and Beyond

Hiroshi Sakuraba, Kazushi Kinoshita, Takuji Tanigami, Takashi Yokoyama, Shinji Horii, Masahiro Saitoh, Keizou Sakiyama, Tetsuo Endoh, Fujio Masuoka (1.The Research Institute of Electrical Communication, TOHOKU University, 2.Advanced Technology Development Center, Sharp Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P10-3] The Impact of Technology Parameters and Scaling on the Programming Performance and Drain Disturb in CHISEL Flash EEPROMs

Deleep R. Nair, Nihar R. Mohapatra, S. Mahapatra, S. Shukuri (1.Department of Electrical Engineering, Indian Institute of Technology, 2.Semiconductor and Integrated Circuits Group, Hitachi Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P10-4] Key Technologies of First ‘Chain’- 32 Mbit Ferroelectric RAM

T. Ozaki, N. Nagel, Y. Kumura, J. Lian, A. Hilliger, T. Tsuchiya, R. Bruchhaus, H. Kanaya, H. Koyama, U. Wellhausen, O. Hidaka, S. Shuto, S. Gernhardt, Y. Shimojo, B. K. Moon, H. Itokawa, U. Egger, H. Zhuang, K. Tomioka, M. Fukushima, K. Yamakawa, D. Takashima, I. Kunishima, Y. Oowaki, G. Beitel (1.Semiconductor Company, Toshiba Corporation, Infineon Technologies Japan K.K.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P10-5] High Performance Pt/ SrBi2Ta2O9/ HfO2/ Si Structure for 1T Ferroelectric Random Access Memory

Ding-Yeong Wang, Chao-Hsin Chien, Ming-Jui Yang, Peer Lehnen, Ching-Chich Leu, Shiow-Huey Chuang, Tiao-Yuan Huang, C. Y. Chang (1.Department of Electronics Engineering, National Chiao Tung University, 2.National Nano Device Laboratories, 3.AIXTRON AG, Germany)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P10-6] Improvement in Read Endurance of Ferroelectric Gate Field-Effect Transistor Memory with an Intermediate Electrode

Tran Dang Khoa, Susumu Horita (1.Japan Advanced Institute of Science and Technology (JAIST))

2003 International Conference on Solid State Devices and Materials |PDF Download

[P10-7] A Novel Sensing Circuit for High Speed Synchronous MRAM

Hyejin Kim, Seungyeon Lee, Seungjun Lee, Hyungsoon Shin, Daejung Kim (1.Ewha Womans University, Dept. of Information Electronics Engineering, 2.Kookmin University, Dept. of Electronics Engineering)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P10-8] Electrical Characterization Sub-micron MTJ Cells Using SPM

Seungbae Park, Jinhee Heo, Teawan Kim, Ilsub Chung (1.School of Information and Communications Engineering, SungKyunKwan University, 2.MD Laboratory, Samsung Advanced Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P10-9] Highly Anisotropic and Corrosion-less PtMn Etching using Negative Ions in Pulse-Time-Modulated Chlorine Plasma

S. Kumagai, T. Shiraiwa, S. Samukawa (1.Institute of Fluid Science, Tohoku University, 2.Micro Systems Network Company, Sony Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download