The Japan Society of Applied Physics

463 results (161 - 170)

[D-8-2] W/HfO2 gate stacks with Tinv~1.2nm and low charge trapping

A. Callegari, P. Jamison, B.H. Lee, D. Neumayer, V. Narayanan, S. Zafar, E. Gousev, C. D'Emic, D. Lacey, M. Gribelyuk, C. Cabral, A. Steegen, V. Ku, R. Amos, Y. Li, P. Nguyen, F. Mc. Feely, G. Singco, J. Cai, S-H Ku, Y.Y. Wang, C. Wajda, D. O'Meara, H. Shinriki, T. Takahashi (1.IBM Semiconductor Research and Development Center (SRDC), 2.IBM T. J. Watson Research Center, 3.Tokyo Electron America (TEL))

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-9-1] Separate and Independent Control of Interfacial Band Alignments and Dielectric Constants in Transition Metal-Rare Earth Ternary Oxides

G. Lucovsky, Yu Zhang, J.L. Whitten, D.G. Scholm, J.L. Freeouf (1.Dept. of Physics, North Carolina State University, 2.Dept. of Chemistry, North Carolina State University, 3.Dept. of Materials Science and Engineering, Pennsylvania State University, 4.Dept. of Electrical and Computer Engineering, Oregon Graduate Institute)

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-9-2] Chemical Structures of HfO2/Si Interfacial Transition Layer

H. Nohira, Y. Takata, K. Kobayashi, M. B. Seman, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, Y. Sugita, O. Nakatsuka, A. Sakai, S. Zaima, T. Ishikawa, S. Shin, T. Hattori (1.Musashi Institute of Technology, 2.RIKEN/SPring-8, 3.JASRI/SPring-8, 4.Graduate School of Engineering, Kyoto University, 5.Fujitsu Ltd., Akiruno Technology Center, 6.Graduate School of Engineering, Nagoya University)

2003 International Conference on Solid State Devices and Materials |PDF Download

463 results (161 - 170)