[B-9-3] A 0.5-V Noise-Shaping A/D Converter Using Low-Threshold FD-SOI Transistors

Yasuyuki Matsuya, Takakuni Douseki (1.NTT Microsystem Integration Laboratories)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-10-1] Quality Comparison of Commercial Silicon-on-Insulator Wafers by Photoluminescence

Michio Tajima (1.Institute of Space and Astronautical Science)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-10-2] Low-Noise and High-Frequency 0.10μm body-tied SOI-CMOS Technology with High-Resistivity Substrate for Low-Power 10Gbps Network LSI

Toshiaki Iwamatsu, Mikio Tujiuchi, Yuuichi Hirano, Takuji Matsumoto, Hiroyuki Takashino, Tatsuhiko Ikeda, Tsutomu Yoshimura, Daniel Chen, Toshihide Oka, Harufusa Kondoh, Takashi Ipposhi, Shigeto Maegawa, Yasuo Inoue, Masahide Inuishi, Yuzuru Ohji (1.Advanced Device Development Dept., Renesas Technology Corp., 2.High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-10-3] Fully Depleted SOI CMOS Device with Raised Source/Drain for 90nm Embedded SRAM Technology

Myoung-Hwan Oh, Chang-Hyun Park, Hee Sung Kang, Chang-Bong Oh, Young-Wug Kim, Kwang-Pyuk Suh (1.Technology Development PT, System LSI Division, Semiconductor Business, Samsung Electronics Co. Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-10-4] Body Contact Structure using Elevated Field Insulator for Ultra-Thin Film SOI-MOSFETs

S. Yamagami, R. Koh, H. Wakabayashi, J.-W. Lee, Y. Saito, A. Ogura, M. Narihiro, K. Arai, H. Takemura, Y. Ochiai, K. Takeuchi, T. Mogami (1.Silicon Systems Research Laboratories and R&D Technical Support Center, NEC Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-10-5L] High Performance 45nm CMOS Technology with 20nm Multi-Gate Devices

Z. Krivokapic, C. Tabery, W. Maszara, Q. Xiang, M.-R. Lin (1.AMD, Technology Research Group)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-10-6L] Double Gate MOSFET by ESS (Empty Space in Silicon) Architecture

Tsutomu Sato, Hideaki Nii, Masayuki Hatano, Yoshimitsu Kato, Kazutaka Ishigo, Keiichi Takenaka, Hisataka Hayashi, Tomoyuki Hirano, Kazuhiko Ida, Takeshi Watanabe, Nobutoshi Aoki, Kazumi Ino, Shigeru Kawanaka, Ichiro Mizushima, Yoshitaka Tsunashima (1.Process & Manufacturing Engineering Center, SoC Research & Development Center, 2.Semiconductor Company, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-1-1] Mobility in high-κ dielectric based field effect transistors

L-A Ragnarsson, W. Tsai, A. Kerber, P.J. Chen, E. Cartier, L. Pantisano, S. De Gendt, M. Heyns (1.IMEC, 2.Intel Corp., 3.Infineon, 4.Texas Instruments, 5.IBM)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-1-2] Effect of the Film Composition of HfAlON Gate Dielectric on the Structural Transformation and the Electrical Properties through High-temperature Annealing

Masato Koyama, Yuuichi Kamimuta, Mitsuo Koike, Masamichi Suzuki, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-1-3] Projection of Mobility Degradation in HfAlOx /SiO2 nMOSFET towards the Reduction of Interfacial Oxide Thickness

N. Yasuda, H. Hisamatsu, H. Ota, K. Iwamoto, K. Tominaga, K. Yamamoto, W. Mizubayashi, N. Yamagishi, M. Ohno, S. Migita, Y. Morita, T. Horikawa, T. Nabatame, A. Toriumi (1.MIRAI-ASET, AIST, 2.MIRAI-ASRC, AIST, 3.Department of Materials Science, The University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF Download