[D-8-4] Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice

Dong-Wook Kim, In-Seok Seo, Kyong-Jun Kim, Kyong-Seok Chae, In-Hwan Lee, Yong-Jo Park, Cheul-Ro Lee (1.RCAMD Research Center of Advanced Materials Development, School of Advanced Materials Engineering, Engineering College, Chonbuk National University, 2.Samsung Advanced Institute of Technology (SAIT))

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-8-5] Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers

Mitsuaki Shimizu, Yoshitaka Hirata, Guanxi Piao, Hajime Okumura (1.Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 2.Department of Science and Technology, Graduated School of Meiji University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-9-1] Fabrication of p-Si/β-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy

Motoki Takauji, Cheng Li, Takashi Suemasu, Fumio Hasegawa (1.Institute of Applied Physics, University of Tsukuba)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-9-2] Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy

Tsuyoshi Sunohara, Cheng Li, Yoshinori Ozawa, Takashi Suemasu, Fumio Hasegawa (1.Institute of Applied Physics, University of Tsukuba)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-9-3] Crystal Growth and Photoresponse of Al-doped β-FeSi2 /Si Heterojunctions

Yoshihito Maeda, Yoshikazu Terai, Masaru Itakura (1.Department of Energy Science and Technology, Kyoto University, 2.Department of Materials Sciences, Osaka Prefecture University, 3.Department of Applied Science for Electronics and Materials, Kyushu University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-9-4] Epitaxial Growth of β-FeSi2 on Single Crystal Insulator

Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo (1.Kanagawa Industrial Technology Research Institute, 2.Department of Innovative and Engineered Materials, Tokyo Institute of Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-9-5] Photoluminescence Enhancement in β-FeSi2 by Annealing in Oxygen

Yoshikazu Terai, Yoshihito Maeda (1.Department of Materials Sciences, Osaka Prefecture University, 2.Department of Energy Science and Technology, Kyoto University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-10-1] High-temperature characteristics of strain in AlxGa1-xN/GaN heterostructures

D.J. Chen, B. Shen, K.X. Zhang, X.S. Wu, J. Xu, H. Zhao, R. Zhang, Y.D. Zheng (1.Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and National Laboratory of Solid State Microstructures, Nanjing University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-10-2] The novel method to improve electrical characteristics of p-GaN by using Ni catalysis

B. R. Huang, S. M. Wang, C. H. Chen, S. J. Chang, Y. K. Su, H. Hung, Y. T. Chou (1.Institute of Electronics Engineering, National Yunlin University of Science and Technology, 2.Department of Electronic Engineering, Cheng Shiu University, 3.Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-10-3] Effect of hydrogen irradiation during growth on molecular beam epitaxy of ZnO

Michihiro Sano, Kazuhiro Miyamoto, Hiroyuki Kato, Takafumi Yao (1.Research & Development Center, Stanley Electric Co., Ltd., 2.Center for Interdisciplinary Research, Tohoku University)

2004 International Conference on Solid State Devices and Materials |PDF Download