The Japan Society of Applied Physics

473 results (241 - 250)

[H-1-2] Solid-electrolyte nanometer switch implemented in Si LSI

T. Sakamoto, S. Kaeriyama, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama, M. Aono (1.Fundamental & Environmental Research Labs., NEC Corp., 2.ICORP, Japan Science & Technology Agency (JST), 3.System Devices Research Labs., NEC Corp., 4.Nanomaterials Laboratory, NIMS)

2004 International Conference on Solid State Devices and Materials |PDF Download

[H-1-5] Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot Array Interconnected with Thin Oxide Layers

Shigeyasu Uno, Nobuya Mori, Kazuo Nakazato, Nobuyoshi Koshida, Hiroshi Mizuta (1.Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cavendish Laboratory, 2.Department of Electronic Engineering, Osaka University, 3.Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, 4.Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, 5.Department of Physical Electronics, Tokyo Institute of Technology, 6.CREST JST (Japan Science and Technology))

2004 International Conference on Solid State Devices and Materials |PDF Download

[H-1-6] Development of New Kinetic Monte Carlo Simulator for Theoretical Design of MgO Protecting Layer in Plasma Display

Momoji Kubo, Tsuyoshi Masuda, Hideyuki Tsuboi, Michihisa Koyama, Hiroshi Kajiyama, Akira Miyamoto (1.Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 2.PRESTO, Japan Science and Technology Agency, 3.New Industry Creation Hatchery Center, Tohoku University, 4.Institute of Industrial Science, University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF Download

473 results (241 - 250)